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JANTXV2N5415UA: 产品描述Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,; 产品类别分立半导体晶体管; 文件大小320KB，共6页; 制造商Microsemi; 官网地址https://www.microsemi.com

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JANTXV2N5415UA概述

Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,

JANTXV2N5415UA规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
Objectid	2078586913
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	COLLECTOR
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	200 V
配置	SINGLE
最小直流电流增益 (hFE)	30
JESD-30 代码	R-XDSO-N4
JESD-609代码	e0
元件数量	1
端子数量	4
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
认证状态	Qualified
参考标准	MIL-19500/485H
表面贴装	YES
端子面层	TIN LEAD
端子形式	NO LEAD
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	10000 ns
最大开启时间（吨）	1000 ns

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2N5415UA – 2N5416UA

Qualified Levels:

JAN, JANTX, JANTXV

and JANS

Compliant

PNP Silicon Low-Power Transistor

Qualified per MIL-PRF-19500/485

DESCRIPTION

This family of 2N5415UA and 2N5416UA epitaxial planar transistors are military qualified up to

a JANS level for high-reliability applications. The UA package is hermetically sealed and

provides a low profile for minimizing board height. These devices are also available in the

long-leaded TO-5, short-leaded TO-39 and low profile U4 packaging.

Important:

For the latest information, visit our website

http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N5415 through 2N5416 series

JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485.

(See

part nomenclature

for all available options.)

RoHS compliant

UA Package

Also available in:

TO-5 package

APPLICATIONS / BENEFITS

•

General purpose transistors for low power applications requiring high frequency switching.

Low package profile

Military and other high-reliability applications

(long-leaded)

2N5415 – 2N5416

TO-39 (TO-205AD)

package

(short-leaded)

2N5415S – 2N5416S

U4 package

(surface mount)

2N5415U4 – 2N5416U4

MAXIMUM RATINGS

@ T

= +25

ºC

unless otherwise noted

Parameters / Test Conditions

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Operating & Storage Junction Temperature Range

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Solder Pad

Total Power Dissipation

@ T

= +25 °C

(2)

@ T

= +25 °C

(1)

Symbol

CEO

CBO

EBO

, T

stg

ӨJA

ӨJSP

2N5415UA

200

6.0

1.0

2N5416UA

300

350

6.0

1.0

Unit

°C

-65 to +200

234

0.75

C/W

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Notes:

1. Derate linearly 4.29 mW/°C for T

> +25°C

2. Derate linearly 12.5 mW/°C for T

> +25 °C

T4-LDS-0305-3, Rev. 1 (7/30/13)

Page 1 of 6

JANTXV2N5415UA相似产品对比

	JANTXV2N5415UA	2N5416UA	JANTX2N5415UA	JANS2N5415UA	2N5415UA	JAN2N5416UA	JANS2N5416UA	JANTX2N5416UA	JANTXV2N5416UA	JAN2N5415UA
描述	Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	符合	不符合	不符合	符合	不符合	不符合	不符合
Objectid	2078586913	1343227778	2078571842	2078551732	1343227775	2078541077	2078551735	2078571852	2078586919	2078541071
Reach Compliance Code	unknown	compliant	unknown	unknown	compliant	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
JESD-609代码	e0	e4	e0	e0	e4	e0	e0	e0	e0	e0
端子面层	TIN LEAD	GOLD OVER NICKEL	TIN LEAD	TIN LEAD	GOLD OVER NICKEL	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
外壳连接	COLLECTOR	-	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	-	1 A	1 A	1 A	1 A	1 A
集电极-发射极最大电压	200 V	300 V	200 V	200 V	-	300 V	300 V	300 V	300 V	200 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	30	30	30	30	-	30	30	30	30	30
JESD-30 代码	R-XDSO-N4	R-CDSO-N4	R-XDSO-N4	R-XDSO-N4	-	R-XDSO-N4	R-XDSO-N4	R-XDSO-N4	R-XDSO-N4	R-XDSO-N4
元件数量	1	1	1	1	-	1	1	1	1	1
端子数量	4	4	4	4	-	4	4	4	4	4
封装主体材料	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	-	PNP	PNP	PNP	PNP	PNP
认证状态	Qualified	-	Qualified	Qualified	-	Qualified	Qualified	Qualified	Qualified	Qualified
参考标准	MIL-19500/485H	-	MIL-19500/485H	MIL-19500/485H	-	MIL-19500/485H	MIL-19500/485H	MIL-19500/485H	MIL-19500/485H	MIL-19500/485H
表面贴装	YES	YES	YES	YES	-	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
最大关闭时间（toff）	10000 ns	10000 ns	10000 ns	10000 ns	-	10000 ns	10000 ns	10000 ns	10000 ns	10000 ns
最大开启时间（吨）	1000 ns	1000 ns	1000 ns	1000 ns	-	1000 ns	1000 ns	1000 ns	1000 ns	1000 ns

JANTXV2N5415UA

JANTXV2N5415UA在线购买

JANTXV2N5415UA概述

JANTXV2N5415UA规格参数

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JANTXV2N5415UA相似产品对比

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