2N2369A, 2N3227, 2N4449
NPN Silicon, High-Speed Switching Transistors
Rev. V1
Features
•
JAN, JANTX, JANTXV, JANS and JANSR Qualified to
MIL-PRF-19500/317
•
For Use in Military and High Reliability Applications
•
TO-18 (TO-206AA), TO-46 (TO-206AB) and Surface Mount U,
UA, and UB and Package Styles (See Mechanical Outlines for
Specific Part/Package Availability)
Electrical Characteristics (+25
o
C unless otherwise specified)
Parameter
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Test Conditions
V
CB
= 40 V dc
V
EB
= 4.5 V dc 2N2369A, 2N4449
V
EB
= 6.0 V dc 2N3227
I
C
= 10 mA dc
2N2369A, 2N4449
2N3227
V
CE
= 20 Vdc
V
CB
= 32 V dc
V
EB
= 4 V dc
V
CE
= 0.35 V dc; I
C
= 10 mA dc
2N2369A, 2N4449
2N3227
V
CE
= 0.4 V dc; I
C
= 30 mA dc
2N2369A, 2N4449
2N3227
V
CE
= 1.0 V dc; I
C
= 10 mA dc
2N2369A, 2N4449
2N3227
V
CE
= 1.0 V dc; I
C
= 100 mA dc
2N2369A, 2N4449
2N3227
Symbol Units
I
CBO1
I
EBO1
µA dc
µA dc
Min.
—
—
Max.
10
10
Breakdown Voltage Collector
-
Emitter
V
(BR)CEO
V dc
—
15
20
0.4
0.2
Collector
-
Emitter Cutoff Current
Collector
-
Base Cutoff Current
I
CES
I
CBO2
I
EBO2
µA dc
µA dc
—
—
Emitter
-
Base Cutoff Current
µA dc
—
0.25
Forward Current Transfer Ratio
h
FE1
-
40
70
120
250
Forward Current Transfer Ratio
h
FE2
-
30
40
120
250
Forward Current Transfer Ratio
h
FE3
-
40
75
120
300
Forward Current Transfer Ratio
h
FE4
-
20
30
120
150
1
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for additional data sheets and product information.
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2N2369A, 2N3227, 2N4449
NPN Silicon, High-Speed Switching Transistors
Rev. V1
Electrical Characteristics (+25
o
C unless otherwise specified)
Parameter
Collector
-
Emitter Saturation Voltage
Collector
-
Emitter Saturation Voltage
Collector
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Collector
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Voltage Saturated
Test Conditions
I
C
= 10 mA dc; I
B
= 1.0 mA dc
I
C
= 30 mA dc; I
B
= 3.0 mA dc
I
C
= 100 mA dc; I
B
= 10 mA dc
I
C
= 10 mA dc; I
B
= 1.0 mA dc
I
C
= 30 mA dc; I
B
= 3.0 mA dc
I
C
= 100 mA dc; I
B
= 10 mA dc
T
A
= +150
o
C; V
CB
= 20 V dc
T
A
= +125
o
C
V
CE
= 10 V dc; V
BE
= 0.25 V dc
T
A
= +125
o
C
I
C
= 10 mA dc; I
B
= 1.0 mA dc
T
A
= +125
o
C
I
C
= 10 mA dc; I
B
= 1.0 mA dc
2N2369A, 2N4449
2N3227
T
A
=
-55
o
C
V
CE
= 1.0 V dc; I
C
= 10 mA dc
2N2369A, 2N4449
2N3227
Symbol Units
V
CE(sat)1
V dc
V
CE(sat)2
V dc
V
CE(sat)3
V dc
V
BE(sat)1
V dc
V
BE(sat)2
V dc
V
BE(sat)3
V dc
I
CBO2
I
CEX2
µA dc
µA dc
Min.
—
—
—
0.70
—
0.8
—
—
—
Max.
0.20
0.25
0.45
0.85
0.90
1.20
30
30
0.3
V
CE(sat)4
V dc
Base
-
Emitter Saturated Voltage
V
BE(sat)4
V dc
0.59
0.50
—
Forward Current Transfer Ratio
h
FE5
-
20
40
Base
-
Emitter Saturated Voltage
T
A
=
-55
o
C
I
C
= 10 mA dc; I
B
= 1.0 mA dc
V
BE(sat)5
V dc
—
1.02
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2369A, 2N3227, 2N4449
NPN Silicon, High-Speed Switching Transistors
Rev. V1
Electrical Characteristics (+25
o
C unless otherwise specified)
Parameter
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Test Conditions
Symbol Units
Min.
Max.
V
CE
= 10 V dc; I
C
= 10 mA dc; f = 100 MHz | h
FE
|
5.0
10
Open Circuit Output Capacitance
V
CB
= 5 V dc; I
E
= 0; 100 kHz<f<1 Mhz
C
obo
pF
—
4.0
Input Capacitance (Output Open-Circuited)
V
EB
= 0.5 V dc; I
C
= 0; 100 kHz<f<1 Mhz
2N2369A, 2N4449
2N3227
C
ibo
pF
—
5.0
4.0
Charge Storage Time
I
C
= 10 mA dc; I
B1
= 10 mA dc;
I
B2
= 10 mA dc
2N2369A, 2N4449
2N3227
t
s
ns
—
13
18
Turn-On Time
I
C
= 10 mA dc; I
B1
= 3.0 mA dc;
I
B2
=
-1.5
mA dc
I
C
= 10 mA dc; I
B1
= 3.0 mA dc;
I
B2
=
-1.5
mA dc
2N2369A, 2N4449
2N3227
t
on
ns
—
12
Turn-Off Time
t
off
ns
—
18
25
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2369A, 2N3227, 2N4449
NPN Silicon, High-Speed Switching Transistors
Rev. V1
Absolute Maximum Ratings (+25
o
C unless otherwise specified)
Ratings
Symbol
Value
Collector
-
Emitter Voltage
2N2369A, UA, UB
2N4449, UA, UB
2N3227, UA, UB
2N2369AU
2N4449U
2N3227U
V
CEO
15 V dc
15 V dc
20 V dc
15 V dc
15 V dc
20 V dc
Collector
-
Base Voltage
(All types)
V
CBO
40 Vdc
Emitter
-
Base Voltage
2N2369A, UA, UB
2N4449, UA, UB
2N3227, UA, UB
2N2369AU
2N4449U
2N3227U
Collector
-
Emitter Voltage
(All types)
V
EBO
4.5 V dc
4.5 V dc
6.0 V dc
4.5 V dc
4.5 V dc
6.0 V dc
40 Vdc
V
CES
Operating & Storage Temperature Range
T
J
, T
STG
-65°C
to +200°C
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2369A, 2N3227, 2N4449
NPN Silicon, High-Speed Switching Transistors
Rev. V1
Thermal Characteristics
Types
Thermal Resistance, Junction to Case
2N2369A
2N4449
2N3227
150°C/W
150°C/W
150°C/W
Symbol
Max. Value
R
θJC
Thermal Resistance, Junction to Solder Pad
2N2369AUA, UB
2N4449UA, UB
2N3227UA, UB
2N2369AU
2N4449U
2N3227U
R
θJSP
210°C/W
210°C/W
210°C/W
290°C/W
290°C/W
290°C/W
(7)
(7)
(7)
Thermal Resistance, Junction to Ambient
2N2369A
2N4449
2N3227
2N2369AUA, UB
2N4449UA, UB
2N3227UA, UB
2N2369AU
2N4449U
2N3227U
400°C/W
400°C/W
400°C/W
486°C/W
486°C/W
486°C/W
350°C/W
350°C/W
350°C/W
(6)
(6)
(6)
R
θJA
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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