2N1479, 2N1480, 2N1481, 2N1482
2N1479S, 2N1480S, 2N1481S, 2N1482S
NPN Medium Power Silicon Transistor
Rev. V3
Features
•
•
•
•
Available in JAN Quality Level per MIL-PRF-19500/207
TO-205AA (TO-5) and TO-205AD (TO-39) Packages
“S” Suffix Denotes TO-205AD (TO-39) Package Style
General Purpose Transistors for Medium Power Applications Requiring
High Frequency Switching
Electrical Characteristics (25
o
C unless otherwise specified)
Parameter
Collector
-
Emitter Breakdown Voltage
Test Conditions
I
E
= 50 mA dc
2N1479, 2N1481
2N1480, 2N1482
I
C
= 0.25 mA dc, V
EB
= 1.5V dc
2N1479, 2N1481
2N1480, 2N1482
V
EB
= 12 V dc
Symbol Units
V
(BR)CEO
V dc
Min.
40
50
Max.
—
Collector
-
Emitter Breakdown Voltage
V
(BR)CEX
V dc
60
100
—
—
Emitter
-
Base Cutoff Current
I
EBO
I
CEO
I
CEO
I
CBO1
µA dc
10
Collector
-
Emitter Cutoff Current
Collector
-
Base Cutoff Current
V
CE
= 60 Vdc
V
CB
= 30 V dc 2N1479, 2N1481
V
CB
= 50 V dc 2N1480, 2N1482
I
C
= 200 mA dc; V
CE
= 4 V dc
2N1479, 2N1480
2N1481, 2N1482
T
A
= 150
o
C
V
CB
= 30 V dc 2N1479, 2N1481
V
CB
= 50 V dc 2N1480, 2N1482
T
A
=
-55
o
C
I
C
= 200 mA dc, V
CE
= 4 V dc
2N1479, 2N1480
2N1481, 2N1482
I
C
= 200 mA dc
I
B
= 20 mA dc, 2N1479, 2N1480
I
B
= 10 mA dc, 2N1481, 2N1482
I
C
= 200 mA dc, V
CE
= 4 V dc
R
C
= 59
Ω,
V
CC
= 12 V dc,
I
B(0)
= I
B(2)
= 8.5 mA dc
I
B(1)
= 20 mA dc
I
C
= 5 mA dc, V
CB
= 28 V dc
µA dc
µA dc
—
—
10
5
5
60
100
0.75
0.75
—
Forward-Current Transfer Ratio
h
FE1
20
35
mA dc
—
Collector
-
Base Cutoff Current
I
CBO2
Forward-Current Transfer Ratio
h
FE2
10
17
—
0.75
0.75
1.5
Collector-Emitter Saturation Voltage
V
CE(SAT)
V dc
Base-Emitter Voltage (unsaturated)
V
BE(on)
V dc
—
Pulse Response
t
on
+ t
off
µs
—
25
Small-Signal, Short-Circuit, Forward-Current
Transfer Ratio Cut Off Frequency
1
f
ab
kHz
800
—
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N1479, 2N1480, 2N1481, 2N1482
2N1479S, 2N1480S, 2N1481S, 2N1482S
NPN Medium Power Silicon Transistor
Rev. V3
Absolute Maximum Ratings (25
o
C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
2N1479, 2N1481
2N1480, 2N1482
Collector
-
Emitter Voltage
2N1479, 2N1481
2N1480, 2N1482
Collector
-
Base Voltage
2N1479, 2N1481
2N1480, 2N1482
Emitter
-
Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
A
= +25°C
Operating & Storage Temperature Range
Symbol
V
CEO
Value
40 V dc
55 V dc
60 V dc
100 V dc
60 V dc
100 V dc
12 V dc
1.5 A dc
1.0 A dc
V
CEX
V
CBO
V
EBO
I
C
I
B
P
T(1)
1.0 W
T
OP
, T
STG
-65°C
to +200°C
(1) This power dissipation is for 1,000 hours expected life at T
A
= +25°C.
Thermal Characteristics
Characteristics
Thermal Resistance Junction to Case
Symbol
R
θJC
Max. Value
35°C/W
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N1479, 2N1480, 2N1481, 2N1482
2N1479S, 2N1480S, 2N1481S, 2N1482S
NPN Medium Power Silicon Transistor
Rev. V3
Outline Drawing: TO-205AA, TO-205AD Package Types
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N1479, 2N1480, 2N1481, 2N1482
2N1479S, 2N1480S, 2N1481S, 2N1482S
NPN Medium Power Silicon Transistor
Rev. V3
VPT COMPONENTS. ALL RIGHTS RESERVED.
Information in this document is provided in connection with VPT Components products. These materials are pro-
vided by VPT Components as a service to its customers and may be used for informational purposes only. Ex-
cept as provided in VPT Components Terms and Conditions of Sale for such products or in any separate agree-
ment related to this document, VPT Components assumes no liability whatsoever. VPT Components assumes
no responsibility for errors or omissions in these materials. VPT Components may make changes to specifica-
tions and product descriptions at any time, without notice. VPT Components makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF VPT COMPONENTS PRODUCTS INCLUDING LIABILITY
OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCI-
DENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. VPT COMPONENTS FURTHER DOES NOT WARRANT THE ACCURA-
CY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CON-TAINED
WITHIN THESE MATERIALS. VPT COMPONENTS SHALL NOT BE LIABLE FOR ANY SPECIAL, IN-DIRECT,
INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVE-NUES
OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
VPT Components products are not intended for use in medical, lifesaving or life sustaining applications. VPT
Components customers using or selling VPT Components products for use in such applications do so at their
own risk and agree to fully indemnify VPT Components for any damages resulting from such improper use or
sale.
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
