HM62W256 Series
32,768-word
×
8-bit Low Voltage Operation CMOS Static RAM
ADE-203-084G (Z)
Rev. 7.0
Jun. 19, 1995
Features
•
Low voltage operation SRAM
Operating Supply Voltage: 3.0 V to 3.6 V
•
0.8
µm
Hi-CMOS process
•
High speed
Access time: 55/70/85 ns (max)
•
Low power
Standby: 0.33
µW
(typ)
•
Completely static memory
No clock or timing strobe required
•
Directly LVTTL compatible: All inputs and outputs
Ordering Information
Type No.
HM62W256LFP-7T
HM62W256LFP-5SLT
HM62W256LFP-7SLT
HM62W256LFP-8SLT
HM62W256LFP-7ULT
HM62W256LT-7
HM62W256LT-7SL
HM62W256LT-8SL
HM62W256LTM-7
HM62W256LTM-5SL
HM62W256LTM-7SL
HM62W256LTM-8SL
HM62W256LTM-7UL
Access Time
70 ns
55 ns
70 ns
85 ns
70 ns
70 ns
70 ns
85 ns
70 ns
55 ns
70 ns
85 ns
70 ns
8 mm
×
13.4 mm 28-pin TSOP (normal type) (TFP-28DA)
8 mm
×
14 mm 32-pin TSOP (normal type) (TFP-32DA)
Package
450 mil 28-pin plastic SOP (FP-28DA)
HM62W256 Series
Pin Arrangement
HM62W256LFP Series
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
(Top View)
HM62W256LT Series
OE
A11
NC
A9
A8
A13
WE
V
CC
A14
A12
A7
A6
A5
NC
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Top View)
HM62W256LTM Series
OE
A11
A9
A8
A13
WE
V
CC
A14
A12
A7
A6
A5
A4
A3
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A10
CS
NC
I/O7
I/O6
I/O5
I/O4
I/O3
V
SS
I/O2
I/O1
I/O0
A0
NC
A1
A2
22
23
24
25
26
27
28
1
2
3
4
5
6
7
(Top View)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
V
SS
I/O2
I/O1
I/O0
A0
A1
A2
2
HM62W256 Series
Pin Description
Pin name
A0 – A14
I/O0 – I/O7
CS
WE
OE
NC
V
CC
V
SS
Function
Address inputs
Input/output
Chip select
Write enable
Output enable
No connection
Power supply
Ground
Block Diagram
V
CC
V
SS
•
•
•
•
•
•
•
•
(MSB) A12
A5
A7
A6
A8
A13
A14
A4
(LSB) A3
Memory Matrix
512
×
512
Row
Decoder
•
•
I/O0
•
•
•
•
•
•
•
•
•
•
•
•
Column I/O
Column Decoder
•
•
Input
Data
Control
•
•
•
I/O7
(LSB)
A2 A1 A0 A10 A9 A11
•
•
(MSB)
•
•
CS
WE
OE
Timing Pulse Generator
Read/Write Control
3
HM62W256 Series
Function Table
WE
X
H
H
L
L
CS
H
L
L
L
L
OE
X
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
Current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
I/O Pin
High-Z
High-Z
Dout
Din
Din
Ref. Cycle
—
—
Read cycle (1)–(3)
Write cycle (1)
Write cycle (2)
Note: X: H or L
Absolute Maximum Ratings
Parameter
Power supply voltage
*1
Terminal voltage
*1
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to 4.6
–0.5
*2
to V
CC
+ 0.5
*3
1.0
0 to + 70
–55 to +125
–10 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. Relative to V
SS
2. V
T
min: –3.0 V for pulse half-width
≤
50 ns
3. Maximum voltage is 4.6 V
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high(logic 1) voltage
Input low(logic 0) voltage
Note:
V
IH
V
IL
Min
3.0
0
2.0
–0.3
*1
Typ
3.3
0
—
—
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
1. V
IL
min: –3.0 V for pulse half-width
≤
50 ns
4
HM62W256 Series
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
Parameter
Input leakage current
Output leakage current
Operating power supply current
(DC)
Symbol Min
|I
LI
|
|I
LO
|
I
CCDC1
I
CCDC2
Average
operating power
supply current
HM62W256-5
I
CCAC1
—
—
—
—
—
Typ
*1
—
—
—
—
—
Max
1
1
15
10
30
Unit
µA
µA
mA
mA
mA
Test conditions
V
SS
≤
Vin
≤
V
CC
CS
= V
IH
or
OE
= V
IH
or
WE
= V
IL
, V
SS
≤
V
I/O
≤
V
CC
CS
= V
IL
,
others = V
IH
/
V
IL
I
I/O
= 0 mA
CS
≤
0.2 V, V
IH
≥
V
CC
– 0.2 V,
V
IL
≤
0.2 V, I
I/O
= 0 mA
min cycle, duty = 100 %,
CS
= V
IL
, others = V
IH
/V
IL
I
I/O
=
0 mA
HM62W256-7
HM62W256-8
I
CCAC1
I
CCAC1
I
CCAC2
—
—
—
—
—
—
30
27
15
mA
Cycle time
≥
1
µs,
duty = 100%
I
I/O
= 0 mA,
CS
≤
0.2 V,
V
IH
≥
V
CC
– 0.2 V, V
IL
≤
0.2 V
CS
= V
IH
Vin
≥
0 V,
CS
≥
V
CC
– 0.2 V,
Standby powr supply current
I
SB
I
SB1
—
—
—
—
0.1
0.1
0.1
0.1
—
—
—
—
1
50
10
*2
5
*3
0.4
0.2
—
—
mA
µA
Output low voltage
V
OL
—
—
V
V
V
V
I
OL
= 2.0 mA
I
OL
= 100
µA
I
OH
= –100
µA
I
OH
= –2.0 mA
Output high voltage
V
OH
V
CC
–
0.2
2.4
Notes: 1. Typical values are at V
CC
= 3.3 V, Ta = +25°C and not guaranteed.
2. This characteristic is guaranteed only for L-SL version.
3. This characteristic is guaranteed only for L-UL version.
Capacitance
(Ta = 25°C, f = 1.0 MHz)
Parameter
Input capacitance
*1
Input/output capacitance
*1
Note:
Symbol
Cin
C
I/O
Min
—
—
Typ
—
—
Max
5
8
Unit
pF
pF
Test Conditions
Vin = 0 V
V
I/O
= 0 V
1. This parameter is sampled and not 100% tested.
5
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