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MBRB7H60-HE3/81

产品描述DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
产品类别分立半导体    二极管   
文件大小134KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 全文预览

MBRB7H60-HE3/81概述

DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

MBRB7H60-HE3/81规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码D2PAK
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-3
针数3
Reach Compliance Codeunknown

文档预览

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New Product
MBR(F,B)7H35 thru MBR(F,B)7H60
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AC
ITO-220AC
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
MBR7Hxx
PIN 1
PIN 2
2
1
MBRF7Hxx
PIN 1
1
CASE
PIN 2
TO-263AB
K
2
1
MBRB7Hxx
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
7.5 A
35 V to 60 V
150 A
0.55 V, 0.61 V
50 µA
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified current (Fig. 1)
Non-repetitive avalanche energy at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2.0 µs, 1 kHz
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Document Number: 88796
Revision: 19-May-08
SYMBOL MBR7H35 MBR7H45 MBR7H50 MBR7H60
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
1.0
20
25
10 000
35
35
35
45
45
45
7.5
80
150
0.5
10
50
50
50
60
60
60
UNIT
V
V
V
A
mJ
A
A
mJ
kV
V/µs
www.vishay.com
1
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

 
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