OTP ROM, 32KX8, 45ns, CMOS, PQCC32, PLASTIC, LCC-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | QFJ |
| 包装说明 | PLASTIC, LCC-32 |
| 针数 | 32 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 45 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PQCC-J32 |
| JESD-609代码 | e0 |
| 长度 | 13.97 mm |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | OTP ROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 32KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QCCJ |
| 封装等效代码 | LDCC32,.5X.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 编程电压 | 12.5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.55 mm |
| 最大待机电流 | 0.00005 A |
| 最大压摆率 | 0.015 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 11.43 mm |
| IS27HC256-45PL | IS27HC256-55PLI | IS27HC256-70PLI | IS27HC256-70PL | IS27HC256-45PLI | IS27HC256-45W | IS27HC256-70W | |
|---|---|---|---|---|---|---|---|
| 描述 | OTP ROM, 32KX8, 45ns, CMOS, PQCC32, PLASTIC, LCC-32 | OTP ROM, 32KX8, 55ns, CMOS, PQCC32, PLASTIC, LCC-32 | OTP ROM, 32KX8, 70ns, CMOS, PQCC32, PLASTIC, LCC-32 | OTP ROM, 32KX8, 70ns, CMOS, PQCC32, PLASTIC, LCC-32 | OTP ROM, 32KX8, 45ns, CMOS, PQCC32, PLASTIC, LCC-32 | OTP ROM, 32KX8, 45ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | OTP ROM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | QFJ | QFJ | QFJ | QFJ | QFJ | DIP | DIP |
| 包装说明 | PLASTIC, LCC-32 | PLASTIC, LCC-32 | PLASTIC, LCC-32 | PLASTIC, LCC-32 | PLASTIC, LCC-32 | 0.600 INCH, PLASTIC, DIP-28 | 0.600 INCH, PLASTIC, DIP-28 |
| 针数 | 32 | 32 | 32 | 32 | 32 | 28 | 28 |
| Reach Compliance Code | compliant | compli | compli | compli | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 45 ns | 55 ns | 70 ns | 70 ns | 45 ns | 45 ns | 70 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PQCC-J32 | R-PQCC-J32 | R-PQCC-J32 | R-PQCC-J32 | R-PQCC-J32 | R-PDIP-T28 | R-PDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 13.97 mm | 13.97 mm | 13.97 mm | 13.97 mm | 13.97 mm | 36.576 mm | 36.576 mm |
| 内存密度 | 262144 bit | 262144 bi | 262144 bi | 262144 bi | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | DIP | DIP |
| 封装等效代码 | LDCC32,.5X.6 | LDCC32,.5X.6 | LDCC32,.5X.6 | LDCC32,.5X.6 | LDCC32,.5X.6 | DIP28,.6 | DIP28,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 编程电压 | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.55 mm | 3.55 mm | 3.55 mm | 3.55 mm | 3.55 mm | 4.699 mm | 4.699 mm |
| 最大待机电流 | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A |
| 最大压摆率 | 0.015 mA | 0.02 mA | 0.02 mA | 0.015 mA | 0.02 mA | 0.015 mA | 0.015 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | J BEND | J BEND | J BEND | J BEND | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 11.43 mm | 11.43 mm | 11.43 mm | 11.43 mm | 11.43 mm | 15.24 mm | 15.24 mm |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | - | - | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
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