OM60N05SA: 产品描述Power Field-Effect Transistor, 60A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, MPAK-3; 产品类别分立半导体晶体管; 文件大小208KB，共6页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

下载文档详细参数选型对比全文预览

OM60N05SA概述

Power Field-Effect Transistor, 60A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, MPAK-3

OM60N05SA规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	HERMETIC SEALED, METAL, MPAK-3
Reach Compliance Code	unknown
ECCN代码	EAR99
雪崩能效等级（Eas）	520 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	50 V
最大漏极电流 (Abs) (ID)	55 A
最大漏极电流 (ID)	60 A
最大漏源导通电阻	0.025 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA
JESD-30 代码	S-MSFM-P3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	235
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	100 W
最大脉冲漏极电流 (IDM)	220 A
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON

文档预览

下载PDF文档

全文
预览

OM60N06SA OM60N05SA OM50N06ST

OM50N06SA OM50N05SA OM50N05ST

LOW VOLTAGE, LOW R

DS(on)

POWER MOSFETS

IN HERMETIC ISOLATED PACKAGE

50V And 60V Ultra Low R

DS(on)

Power MOSFETs In TO-257 And TO-254

Isolated Packages

FEATURES

•

Isolated Hermetic Metal Packages

Ultra Low R

DS(on)

Low Conductive Loss/Low Gate Charge

Available Screened To MIL-S-19500, TX, TXV And S Levels

Ceramic Feedthroughs Available

DESCRIPTION

This series of hermetic packaged MOSFETs are ideally suited for low voltage

applications; battery powered voltage power supplies, motor controls, dc to dc

converters and synchronous rectification. The low conduction loss allows smaller

heat sinking and the low gate charge simpler drive circuitry.

MAXIMUM RATINGS

(Per Device)

PART NO.

OM60N06SA

OM50N06SA

OM50N06ST

OM60N05SA

OM50N05SA

OM50N05ST

(V)

DS(on)

( )

.025

.030

.035

.025

.030

.035

(A)

Package

TO-254AA

TO-257AA

TO-254AA

TO-257AA

3.1

SCHEMATIC

Drain

T-3 PIN

CONNECTION

M-PAK PIN

CONNECTION

1 2 3

Gate

Source

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

4 11 R1

Supersedes 3 02 R0

3.1 - 65

OM60N05SA相似产品对比

	OM60N05SA	OM50N06ST	OM50N05ST	OM50N06SA
描述	Power Field-Effect Transistor, 60A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, MPAK-3	Power Field-Effect Transistor, 50A I(D), 60V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, T-3, 3 PIN	Power Field-Effect Transistor, 50A I(D), 50V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, T-3, 3 PIN	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, MPAK-3
是否Rohs认证	不符合	不符合	不符合	不符合
包装说明	HERMETIC SEALED, METAL, MPAK-3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	HERMETIC SEALED, METAL, MPAK-3
Reach Compliance Code	unknown	compliant	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	520 mJ	400 mJ	400 mJ	400 mJ
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	50 V	60 V	50 V	60 V
最大漏极电流 (Abs) (ID)	55 A	50 A	50 A	50 A
最大漏极电流 (ID)	60 A	50 A	50 A	50 A
最大漏源导通电阻	0.025 Ω	0.033 Ω	0.033 Ω	0.028 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA	TO-257AA	TO-257AA	TO-254AA
JESD-30 代码	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
JESD-609代码	e0	e0	e0	e0
元件数量	1	1	1	1
端子数量	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL	METAL
封装形状	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	235	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	100 W	100 W	100 W	100 W
最大脉冲漏极电流 (IDM)	220 A	200 A	200 A	200 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
厂商名称	Infineon(英飞凌)	-	Infineon(英飞凌)	Infineon(英飞凌)

OM60N05SA

OM60N05SA概述

OM60N05SA规格参数

文档预览

OM60N05SA相似产品对比

推荐资源