Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
0.2+/-0.05
(0.22)
(0.22)
(0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
OUTLINE
DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15
1.0+/-0.05
2
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
3
(0.25)
INDEX MARK
(Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1B
17 Aug 2010
1/9
3.5+/-0.05
2.0+/-0.05
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
Junction to case
RATINGS UNIT
30
V
+/-20
V
21.9
W
0.1
W
1.5
A
°C
150
-40 to +125
°C
°C/W
5.7
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
th
Pout1
η
D1
Pout2
η
D2
PARAMETER
Drain cutoff current
Gate cutoff current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=50mW,
f=175MHz Idq=200mA
V
DD
=7.2V, Pin=50mW,
f=520MHz Idq=200mA
V
DD
=9.2V,Po=2W(Pin Control)
f=175MHz,Idq=200mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
V
DD
=9.2V,Po=2W(Pin Control)
f=520MHz,Idq=200mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
MIN
-
-
1
2
55
2
50
LIMITS
TYP MAX.
-
100
-
1
1.8
3
3
-
65
-
3
-
65
-
No destroy
UNIT
uA
uA
V
W
%
W
%
-
Load VSWR tolerance
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD02MUS1B
17 Aug 2010
2/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
Vgs-Ids CHARACTERISTICS
3.0
2.5
Ta=+25°C
Vds=7.2V
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.8 mm)
25
CHANNEL DISSIPATION Pch(W)
...
20
15
10
5
0
0
On heat-sink
Ids(A),GM(S)
2.0
1.5
1.0
Ids
On PCB (*1)
with through hole
and Heat-sink
GM
0.5
0.0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(deg:C.)
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
5.0
4.5
4.0
3.5
Ciss(pF)
3.0
Ids(A)
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
Vds(V)
8
10
Vgs=4V
Vgs=3V
Vgs=5V
Vgs=6V
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vds VS. Ciss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
0
0
5
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
6
5
4
Ta=+25°C
f=1MHz
30
Coss(pF)
Crss(pF)
20
3
2
10
1
0
0
5
10
Vds(V)
15
20
0
0
5
10
Vds(V)
15
20
RD02MUS1B
17 Aug 2010
3/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
Pin-Po CHARACTERISTICS
@f=175MHz
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
Po
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
30
25
20
15
10
5
0
-10
100
90
Pout(W) , Idd(A)
80
ηd(%)
4.0
100
3.0
Po
ηd
80
ηd(%)
Idd(A)
17 Aug 2010
Gp
η½
70
60
50
2.0
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
40
30
20
1.0
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Idd
60
40
0.0
0
20
40
60
Pin(mW)
80
-5
0
5
10
Pin(dBm)
15
20
20
100
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
30
25
20
15
10
5
0
-10
Pin-Po CHARACTERISTICS
@f=520MHz
Po
100
90
Pout(W) , Idd(A)
80
4.0
Pin-Po CHARACTERISTICS
@f=520MHz
Po
100
3.0
ηd
80
ηd(%)
Gp
ηd(%)
η½
70
60
50
2.0
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
40
30
20
1.0
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
60
40
0.0
0
20
40
60
Pin(mW)
80
-5
0
5
10
Pin(dBm)
15
20
20
100
7
6
5
Po(W)
4
3
2
1
0
3
Vdd-Po CHARACTERISTICS
@f=175MHz
Ta=25°C
f=175MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
1.4
1.2
1.0
Idd(A)
Po(W)
7
6
5
4
3
2
1
0
3
Vdd-Po CHARACTERISTICS
@f=520MHz
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
1.4
1.2
1.0
Idd
0.8
0.6
0.4
0.2
0.0
Idd
0.8
0.6
0.4
0.2
0.0
5
7
9
Vdd(V)
11
13
5
7
9
Vdd(V)
11
13
RD02MUS1B
4/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
Vdd
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
Vgg
C1
19m m
RD02MUS1B
R D 02MVS1
175MHz
C2
15m m
10pF
L3
5m m
3m m
3m m 11.5m m
10pF
10uF,50V
4.7kO HM
RF-IN
3m m 33m m
6.5m m 12m m
L1
39pF
68O HM
240pF
13.5m m 12m m 5m m RF-O UT
L2
62pF
43pF
5m m 62pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D
L2: Enam eled wire 3Turns,D :0.43m m ,2.46m m O .D
L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D
C 1,C 2:1000pF,0.0022uF in parallel
Note:Board m aterial-Teflon substrate
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
TEST CIRCUIT(f=520MHz)
V gg
Vdd
C1
19m m
19m m
R D 02MUS 1
B
520MHz
3m m
11m m
62pF
6pF
43pF
240pF
68O HM
L1
C2
10uF,50V
4.7kO HM
26.5m m 20m m
RF-IN
2m m
10m m
4.5m m
40.5m m
R F-OUT
62pF
18pF
L1: Enam eled wire 9Turns,D :0.43m m ,2.46m m O .D
C1,C 2:1000pF,0.022uF in parallel
Note:Board m aterial-Teflon substrate
Micro strip line width=2.2m m /50OHM,er:2.7,t=0.8m m
RD02MUS1B
17 Aug 2010
5/9
Microchip MCU
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