OM60N06SA OM60N05SA OM50N06ST
OM50N06SA OM50N05SA OM50N05ST
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V And 60V Ultra Low R
DS(on)
Power MOSFETs In TO-257 And TO-254
Isolated Packages
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Packages
Ultra Low R
DS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate charge simpler drive circuitry.
MAXIMUM RATINGS
(Per Device)
PART NO.
OM60N06SA
OM50N06SA
OM50N06ST
OM60N05SA
OM50N05SA
OM50N05ST
V
DS
(V)
60
60
60
50
50
50
R
DS(on)
( )
.025
.030
.035
.025
.030
.035
I
D
(A)
60
50
50
60
50
50
Package
TO-254AA
TO-254AA
TO-257AA
TO-254AA
TO-254AA
TO-257AA
3.1
SCHEMATIC
Drain
T-3 PIN
CONNECTION
M-PAK PIN
CONNECTION
1 2 3
Gate
1
2
3
Source
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
4 11 R1
Supersedes 3 02 R0
3.1 - 65
OM60N06SA - OM50N05ST
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction-To-Case
T
J
T
stg
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1
Operating and
-55 to 150
Storage Temperature Range
300
300
300
300
°C
-55 to 150
-55 to 150 -55 to 150
°C
60N06SA
60
60
55
37
220
100
40
.80
50N06ST
50N05SA
60
60
50
33
200
100
40
.80
60N05SA
50
50
55
37
220
100
40
.80
50N05ST
50N05SA
50
50
50
33
200
100
40
.80
Units
V
V
A
A
A
W
W
W/°C
Lead Temperature (1/16" from case for 10 secs.)
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited SA I
D
= 25 A, SC SC I
D
= 35 A @ 25 C
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.25
°C/W
PACKAGE LIMITATIONS
Parameters
I
D
Continuous Drain Current
Linear Derating Factor, Junction-to-Ambient
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
Linear Derating, Junction-to-Case
TO254AA
25
.020
50
0.8
TO-257AA
15
.015
65
0.8
Unit
A
W/°C
°C/W
W/°C
3.1
T-3 MECHANICAL OUTLINE
.420
.410
.200
.190
.144 DIA.
PACKAGE OPTIONS
M-PAK MECHANICAL OUTLINE
.545
.535
.050
.040
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
MOD PAK
.150
.140
.685
.665
.800
.790
.550
.530
.750
.500
.005
.045
.035
.550
.510
.005
.150 TYP.
.150 TYP.
.260
.249
Z-TAB
.035
.025
.100 TYP.
.120 TYP.
Notes:
• Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the
part number. Example - OMXXXXCSA.
• MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
6 PIN SIP
3.1 - 66
OM60N06SA
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
(T
C
= 25°C unless otherwise specified)
OM50N06SA
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
Single Pulse Avalanche Energy
E
AR
Repetitive Avalanche Energy
I
AR
Avalanche Current
Min. Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
520 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
130 mJ (pulse width limited
by T
j max
,
d<
1%)
34
A
(repetitive or
non-repetitive, T
J
= 100°C)
60
250
1000
±100
µA
µA
nA
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
250
1000
±100
µA
µA
nA
V
I
D
= 250 µA, V
GS
= 0
60
V
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
Min. Typ. Max. Units Test Conditions
50
A
(repetitive or
non-repetitive,T
J
= 25°C)
400 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
100 mJ (pulse width limited
by T
j max
,
d<
1%)
30
A
(repetitive or
non-repetitive, T
J
= 100°C)
2
4
.025
.050
A
17
2000
1000
300
45
90
200
45
160
90
250
50
200
2
150
Reverse Recovery Charge
Reverse Recovery Current
Q
rr
I
RRM
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
0.2
4
50
A
S
pF
pF
pF
V
2
4
.028
.056
V
55
16
2500
950
250
110
300
160
65
160
160
320
440
55
200
1.6
100
I
SD
= 55 A, V
GS
= 0
I
SD
= 55 A, di/dt = 100 A/µs
V
R
= 25 V, T
j
= 150°C
.25
5
µC
A
A
A
V
nS
nS
nS
nS
V
DD
= 40 V, I
D
= 55 A
R
G
= 50 , V
GS
= 10 V
nS V
DD
= 25 V, I
D
= 55 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 40 V, I
D
= 55 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 25 V, I
D
= 30 A, V
GS
= 10 V
S
pF
pF
pF
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 25 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
nS V
DD
= 25 V, I
D
= 29 A
nS R
G
= 4.7 , V
GS
= 10 V
A/µS V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 40 V, I
D
= 50 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
3.1 - 67
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
I
SD
= 50 A, V
GS
= 0
I
SD
= 50 A, di/dt = 100 A/µs
V
R
= 30 V, T
j
= 150°C
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
OM60N06SA - OM50N05ST
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
3.1
3.1
OM60N06SA - OM50N05ST
OM50N06ST
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
50
A
(repetitive or
non-repetitive,T
J
= 25°C)
400 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
100 mJ (pulse width limited
by T
j max
,
d<
1%)
30
A
(repetitive or
non-repetitive, T
J
= 100°C)
60
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
OM60N05SA
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
520 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
130 mJ (pulse width limited
by T
j max
,
d<
1%)
34
A
(repetitive or
non-repetitive, T
J
= 100°C)
50
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
.033
.066
V
50
17
2000
1000
300
45
90
200
45
160
90
250
50
200
2
150
0.2
4
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 25 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 25 V, I
D
= 29 A
nS R
G
= 4.7 , V
GS
= 10 V
A/µS V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 40 V, I
D
= 50 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
.025
.050
V
55
16
2500
950
250
110
300
160
65
160
160
320
55
200
1.6
100
.25
5
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
3.1 - 68
I
SD
= 50 A, V
GS
= 0
I
SD
= 50 A, di/dt = 100 A/µs
V
R
= 30 V, T
j
= 150°C
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 25 V, I
D
= 55 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 40 V, I
D
= 55 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 25 V, I
D
= 30 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 40 V, I
D
= 55 A
R
G
= 50 , V
GS
= 10 V
I
SD
= 55 A, V
GS
= 0
I
SD
= 55 A, di/dt = 100 A/µs
V
R
= 25 V, T
j
= 150°C
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM50N05SA
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
50
A
(repetitive or
non-repetitive,T
J
= 25°C)
400 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
100 mJ (pulse width limited
by T
j max
,
d<
1%)
30
A
(repetitive or
non-repetitive, T
J
= 100°C)
50
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
OM50N05ST
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
50
A
(repetitive or
non-repetitive,T
J
= 25°C)
400 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
100 mJ (pulse width limited
by T
j max
,
d<
1%)
30
A
(repetitive or
non-repetitive, T
J
= 100°C)
50
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
.028
.056
V
50
17
2000
1000
300
45
90
200
45
160
90
250
50
200
2
150
0.2
4
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 25 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 25 V, I
D
= 29 A
nS R
G
= 4.7 , V
GS
= 10 V
A/µS V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 40 V, I
D
= 50 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
.033
.066
V
50
17
2000
1000
300
45
90
200
45
160
90
250
50
200
2
150
0.2
4
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 25 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
3.1 - 69
I
SD
= 50 A, V
GS
= 0
I
SD
= 50 A, di/dt = 100 A/µs
V
R
= 30 V, T
j
= 150°C
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 25 V, I
D
= 29 A
nS R
G
= 4.7 , V
GS
= 10 V
A/µS V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 40 V, I
D
= 50 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
OM60N06SA - OM50N05ST
I
SD
= 50 A, V
GS
= 0
I
SD
= 50 A, di/dt = 100 A/µs
V
R
= 30 V, T
j
= 150°C
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
3.1
微控制器 MCU
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