OM6413SP3
OM6414SP3
OM6415SP3
OM6416SP3
THREE PHASE MOSFET HALF BRIDGE
IN A PLASTIC SIP PACKAGE
100V Thru 500V, Up to 6 Amp, Three Phase
MOSFET Half Bridge
FEATURES
•
•
•
•
•
•
Isolated High Density, Low Profile Package
6 MOSFETs Per Package
Fast Switching, Low Drive Current
Heat Sinkable
Low R
DS(on)
P-Channel Also Available
DESCRIPTION
This series of three phase MOSFET half bridge products feature the latest advanced
MOSFET and packaging technology. They are ideally suited where small size, high
performance and high reliability are required in applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse
circuits.
2.1
MAXIMUM RATINGS
(Per MOSFET)
PART NUMBER
OM6413SP3
OM6414SP3
OM6415SP3
OM6416SP3
V
DS
100V
200V
400V
500V
R
DS(on)
.085
.180
.55
.85
I
D(MAX)
6A
4A
2.5A
2A
SCHEMATIC
D
G
S
D
G
S
G
S
G
S
D
G
S
D
G
S
D
D
PIN CONNECTION
1
3
5
7
9
11 13 15 17
1 3 4
5
6 9 10
11 12 14 15
16 17 18
2
4
6
8
10 12 14 16 18
Pin 1:
Pin 2:
Pin 3:
Pin 4:
V
CC
N/C
Gate
Gate
Pin 5:
Pin 6:
Pin 7:
Pin 8:
Source
Drain/Source
N/C
N/C
Pin 9:
Pin 10:
Pin 11:
Pin 12:
Gate
Gate
Source
Drain/Source
Pin 13:
Pin 14:
Pin 15:
Pin 16:
N/C
Gate
Gate
Source
Pin 17: Drain/Source
Pin 18: V
CC
Note: Pin 1 and Pin 18 are common
4 11 R1
Supersedes 1 06 R0
2.1 - 115
2.1
OM6413SP3 - OM6416SP3
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6413SP3
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
Current
1
6
0.1
0.2
2.0
100
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6414SP3
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
Current
1
4
1.4
0.1
0.2
2.0
200
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
A
1.275 1.425
.085 .095
.130 .155
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 100° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 6 A,
T
C
= 100 C
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
A
1.8
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 100° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A,
T
C
= 100 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.14 0.18
0.28 0.36
2.1 - 116
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
7.2
1275 1600
550
160
16
19
42
24
800
300
30
60
80
30
S
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 6 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
15 A
R
g
= 5
W
, R
L
= 2
W
(MOSFET) switching times are
essentially independent of
operating temperature.
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
9.0
1000 1600
250
100
17
52
36
30
750
300
30
60
80
60
S
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 4 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
10 A
R
g
= 5
W
, R
L
= 7.3
W
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
400
- 2.5
V
ns
Reverse Recovery Time
- 20
A
-6
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
350
-4
- 25
-2
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -12 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
T
C
= 25 C, I
S
= -9 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
Reverse Recovery Time
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6415SP3
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Current
1
2.5
0.1
0.2
2.0
400
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6416SP3
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
Current
1
2.0
3.2
0.8
0.1
0.2
2.0
500
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
A
2.35 2.75
0.47 0.55
0.93 1.10
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 100° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A,
T
C
= 100 C
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
A
3.4
0.85
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 100° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2 A
V
GS
= 10 V, I
D
= 2 A
V
GS
= 10 V, I
D
= 2 A,
T
C
= 100 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
1.50 1.65
2.1 - 117
Resistance
1
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward
Transductance
1
4.0
4.4
1150 1600
165
70
17
12
45
30
450
150
35
15
90
35
S
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 2.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
@
5 A
R
g
= 5
W
, R
L
= 35
W
(MOSFET) switching times are
essentially independent of
operating temperature.
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
4.8
1225 1600
200
85
17
5
42
14
350
150
35
15
90
30
S
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 2 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
@
4 A
R
g
= 5
W
, R
L
= 49
W
(MOSFET) switching times are
essentially independent of
operating temperature.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
- 10
-2
400
A
V
ns
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
- 2.5
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
-2
-8
-2
400
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
OM6413SP3 - OM6416SP3
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
S
T
C
= 25 C, I
S
= -5 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
T
C
= 25 C, I
S
= -9 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
2.1
OM6413SP3 - OM6416SP3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
DM
V
GS
P
D
@ T
C
= 25°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Linear Derating Factor
OM6413
100
100
±6
± 30
± 20
50
0.5
.020
OM6414
200
200
±4
± 25
± 20
50
0.5
.020
OM6415
400
400
± 2.5
± 20
± 20
50
0.5
.020
OM6416
500
500
±2
± 15
± 20
50
0.5
.020
Units
V
V
A
A
V
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 5 secs.)
-55 to 125
225
-55 to 125 -55 to 125 -55 to 125
225
225
225
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2
Pan Head Screw, Non-Lubricated Threads
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
Mounting Torque
2.00
50
3.0
°C/W
°C/W
LBF•IN
Free Air Operation
2.1
POWER RATING
MECHANICAL OUTLINE
P
D
- POWER DISSIPATION (WATTS)
150
2.800
.240
MAX.
.115
125
100
75
50
25
0
0
25
50
75
100 125 150 175
.810
.150
2.500
.187 R
2 PLCS.
.150
.405
.075 R
2 PLCS.
.100
.300 MIN.
.018
18 PLCS.
.450
MIN.
.010
.060
.400
.100
17 PLCS.
T
C
- CASE TEMPERATURE (°C)
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