OM6017SA OM6019SA
OM6018SA OM6020SA
POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
Same as IRFM 150 - 450 Series
Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
@ 25
°
C
PART NUMBER
OM6017SA
OM6018SA
OM6019SA
OM6020SA
V
DS
100 V
200 V
400 V
500 V
R
DS(on)
.065
.100
.33
.42
I
D
25 A
25 A
13 A
11 A
3.1
SCHEMATIC
POWER RATING
4 11 R4
Supersedes 1 07 R3
3.1 - 85
3.1
OM6017SA - OM6020SA
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6017SA
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
35
1.1
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6018SA
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
30
0.1
0.2
(T
C
= 25°C unless otherwise noted)
Min. Typ. Max. Units Test Conditions
100
2.0
4.0
100
- 100
0.25
1.0
V
V
nA
nA
mA
mA
A
1.3
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= -20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
200
2.0
4.0
100
-100
0.25
1.0
V
V
nA
nA
mA
mA
A
1.36 1.60
.085 .100
0.14 0.17
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= + 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125 C
Static Drain-Source On-State
Static Drain-Source On-State
0.55 0.65
.09
0.11
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
9.0
2700
1300
470
28
45
100
50
S(W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
20 A
R
g
= 5.0
W
, V
G
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
10.0
2400
600
250
25
60
85
38
S(W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
16 A
R
g
= 5.0
W
,V
GS
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
400
- 40
- 160
- 2.5
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
- 30
- 120
-2
350
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
V
Forward Transductance
1
(W )
3.1 - 86
DYNAMIC
DYNAMIC
Forward Transductance
1
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6019SA
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
15
2.0
0.25
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6020SA
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
13
2.1
0.3
0.1
0.2
(T
C
= 25°C unless otherwise noted)
Min. Typ. Max. Units Test Conditions
400
2.0
4.0
100
- 100
0.25
1.0
V
V
nA
nA
mA
mA
A
2.64
.33
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
500
2.0
4.0
100
- 100
0.25
1.0
V
V
nA
nA
mA
mA
A
2.94
0.42
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A,
T
C
= 125 C
Static Drain-Source On-State
Static Drain-Source On-State
0.50 0.66
0.66 0.88
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward
Transductance
1
6.0
2900
450
150
30
40
80
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 8.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
@
8.0 A
R
g
=5.0
W
, V
GS
=10V
(MOSFET switching times are
essentially independent of
operating temperature.)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
2600
280
40
30
46
75
31
S(W
)
V
DS
2 V
DS(on)
, I
D
= 7.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5.0
W
, V
GS
= 10 V
(MOSFET switching times are
essentially independent of
operating temperature.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
600
- 15
- 60
- 1.6
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
- 13
- 52
- 1.4
700
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
T
J
= 100 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
V
(W )
3.1 - 87
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
OM6017SA - OM6020SA
S
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OM6017SA - OM6020SA
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Junction To Ambient
T
J
T
stg
Lead Temperature
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150
300
-55 to 150
300
-55 to 150
300
°C
°C
OM6017SA OM6018SA OM6019SA OM6020SA Units
100
100
±25
±16
±100
± 20
125
50
1.0
.020
200
200
±25
±16
±80
± 20
125
50
1.0
.020
400
400
±13
±8
±54
±20
125
50
1.0
.020
500
500
±11
±7
±40
± 20
125
50
1.0
.020
V
V
A
A
A
V
W
W
W/°C
W/°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation
= 15 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.0
50
°C/W
°C/W Free Air Operation
MECHANICAL OUTLINE
.144 DIA.
.940
.740
.540
.200
.100
2 PLCS.
.040
.260
MAX
.545
.535
.050
.040
3.1
.290
.125
2 PLCS.
.250
.685
.665
.800
.790
.550
.530
.125 DIA.
2 PLS.
.540
1 2 3
.500
MIN.
1
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.150
2
3
.550
.510
.005
.150
.300
.040 DIA.
3 PLCS.
.045
.035
.150 TYP.
.260
.249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
NOTES:
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
