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IRGC50B120KBPBF

产品描述Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
产品类别分立半导体    晶体管   
文件大小109KB,共1页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
标准  
下载文档 详细参数 选型对比 全文预览

IRGC50B120KBPBF概述

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

IRGC50B120KBPBF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称International Rectifier ( Infineon )
零件包装代码DIE
包装说明UNCASED CHIP, O-XUUC-N
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
集电极-发射极最大电压1200 V
配置SINGLE
JESD-30 代码O-XUUC-N
元件数量1
端子数量2
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式UNCASED CHIP
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式NO LEAD
端子位置UPPER
处于峰值回流温度下的最长时间40
晶体管应用MOTOR CONTROL
晶体管元件材料SILICON

文档预览

下载PDF文档
PD - 93870
IRGC50B120KB
Die in Wafer Form
Features
GEN5 Non Punch Through (NPT) Technology
Low V
CE(on)
10
µ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
C
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Excellent Current Sharing in Parallel Operation
G
E
1200V
I
C(nom)
= 50A
V
CE(on) typ.
=2.15V @
I
C(nom)
@ 25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Electrical Characteristics (Wafer Form)
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (min, max)
Collector-to-Emitter Saturation Voltage
1.3V min, 1.53V max
Colletor-to-Emitter Breakdown Voltage
1200V min
Gate Threshold Voltage
4.4V min, 6.0V max
Zero Gate Voltage Collector Current
20µA max
Gate-to-Emitter Leakage Current
± 1.1µA max
Test Conditions
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 500µA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 500µA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.364" x 0.364"
150mm, with std. < 100 > flat
185µm, +/-15µm
01-5346
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
9.246
[.364]
7.854
[.309]
NOT ES:
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONT ROLLING DIMENSION: [INCH].
3. LET T ER DES IGNAT ION:
S = S OURCE
G = GAT E
S K = S OURCE KELVIN
IS = CURRENT S ENS E
E = EMIT T ER
4. DIMENS IONAL T OLERANCES :
7.757
[.305]
EMIT TER
BONDING PADS:
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
1.205
[.047]
G
WIDT H
&
LENGT H
OVERALL DIE:
WIDT H
&
01-5346
1.196
[.047]
LENGT H
www.irf.com
2/14/2000

IRGC50B120KBPBF相似产品对比

IRGC50B120KBPBF
描述 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
是否无铅 不含铅
是否Rohs认证 符合
厂商名称 International Rectifier ( Infineon )
零件包装代码 DIE
包装说明 UNCASED CHIP, O-XUUC-N
针数 2
Reach Compliance Code compliant
ECCN代码 EAR99
集电极-发射极最大电压 1200 V
配置 SINGLE
JESD-30 代码 O-XUUC-N
元件数量 1
端子数量 2
封装主体材料 UNSPECIFIED
封装形状 ROUND
封装形式 UNCASED CHIP
峰值回流温度(摄氏度) 260
极性/信道类型 N-CHANNEL
认证状态 Not Qualified
表面贴装 YES
端子形式 NO LEAD
端子位置 UPPER
处于峰值回流温度下的最长时间 40
晶体管应用 MOTOR CONTROL
晶体管元件材料 SILICON

 
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