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IRGC49B120KBPBF

产品描述Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER
产品类别分立半导体    晶体管   
文件大小15KB,共1页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准
下载文档 详细参数 选型对比 全文预览

IRGC49B120KBPBF概述

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER

IRGC49B120KBPBF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Infineon(英飞凌)
包装说明UNCASED CHIP, O-XUUC-N
Reach Compliance Codecompliant
集电极-发射极最大电压1200 V
配置SINGLE
JESD-30 代码O-XUUC-N
元件数量1
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式UNCASED CHIP
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
表面贴装YES
端子形式NO LEAD
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用MOTOR CONTROL
晶体管元件材料SILICON

文档预览

下载PDF文档
PD - 94353
IRGC49B120KB
Die in Wafer Form
Features
GEN5 Non Punch Through (NPT) Technology
Low V
CE(on)
10
µ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Excellent Current Sharing in Parallel Operation
Qualified for Industrial Market
C
Benefits
G
E
1200V
I
C(nom)
= 50A
V
CE(on) typ.
=2.33V @
I
C(nom)
@ 25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Reference Standard IR Package Part: IRGPS60B120KD
Electrical Characteristics (Wafer Form)
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (min, max)
Collector-to-Emitter Saturation Voltage
1.35V min, 1.60V max
Colletor-to-Emitter Breakdown Voltage
1200V min
Gate Threshold Voltage
4.4V min, 6.0V max
Zero Gate Voltage Collector Current
20µA max
Gate-to-Emitter Leakage Current
± 1.1µA max
Test Conditions
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 500µA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 500µA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.305" x 0.390"
150mm, with std. < 100 > flat
185µm, +/-15µm
01-5405
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
7.747
[.305]
6.354
[.250]
NOT ES :
1. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
2. CONT ROLLING DIMENSION: [INCH].
3. LETT ER DES IGNAT ION:
S = S OURCE
G = GATE
S K = S OURCE KELVIN
IS = CURRENTS ENS E
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
E = EMIT TER
4. DIMENS IONAL T OLERANCES :
9.906
[.390]
8.429
[.332]
BONDING PADS :
WIDT H
&
LENGTH
OVERALL DIE:
EMIT T ER
1.205
[.047]
G
1.196
[.047]
WIDT H
&
LENGTH
www.irf.com
01/09/02

IRGC49B120KBPBF相似产品对比

IRGC49B120KBPBF
描述 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER
是否Rohs认证 符合
厂商名称 Infineon(英飞凌)
包装说明 UNCASED CHIP, O-XUUC-N
Reach Compliance Code compliant
集电极-发射极最大电压 1200 V
配置 SINGLE
JESD-30 代码 O-XUUC-N
元件数量 1
封装主体材料 UNSPECIFIED
封装形状 ROUND
封装形式 UNCASED CHIP
峰值回流温度(摄氏度) NOT SPECIFIED
极性/信道类型 N-CHANNEL
表面贴装 YES
端子形式 NO LEAD
端子位置 UPPER
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 MOTOR CONTROL
晶体管元件材料 SILICON

 
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