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OMD200V: 产品描述Power Field-Effect Transistor, 25A I(D), 200V, 0.11ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; 产品类别分立半导体晶体管; 文件大小169KB，共4页; 制造商Omnirel Corp

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OMD200V概述

Power Field-Effect Transistor, 25A I(D), 200V, 0.11ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

OMD200V规格参数

参数名称	属性值
厂商名称	Omnirel Corp
Reach Compliance Code	unknown
其他特性	HIGH RELIABILITY
外壳连接	ISOLATED
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (ID)	25 A
最大漏源导通电阻	0.11 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MDFM-F12
元件数量	4
端子数量	12
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	80 A
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON

OMD200V相似产品对比

	OMD200V	OMD400V	OMD200T	OMD400T	OMD100T	OMD100V	OMD300V	OMD300T
描述	Power Field-Effect Transistor, 25A I(D), 200V, 0.11ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 13A I(D), 400V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 25A I(D), 200V, 0.11ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 13A I(D), 400V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 25A I(D), 100V, 0.08ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 25A I(D), 100V, 0.08ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 13A I(D), 400V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 13A I(D), 400V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS
最小漏源击穿电压	200 V	400 V	200 V	400 V	100 V	100 V	400 V	400 V
最大漏极电流 (ID)	25 A	13 A	25 A	13 A	25 A	25 A	13 A	13 A
最大漏源导通电阻	0.11 Ω	0.35 Ω	0.11 Ω	0.35 Ω	0.08 Ω	0.08 Ω	0.35 Ω	0.35 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MDFM-F12	R-MDFM-F12	R-MDFM-F12	R-MDFM-F12	R-MDFM-F12	R-MDFM-F12	R-MDFM-F12	R-MDFM-F12
元件数量	4	4	4	4	4	4	4	4
端子数量	12	12	12	12	12	12	12	12
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	80 A	54 A	80 A	54 A	100 A	100 A	54 A	54 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Omnirel Corp	-	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp

OMD200V

OMD200V概述

OMD200V规格参数

OMD200V相似产品对比

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