OM6529SST概述

Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6

OM6529SST规格参数

	OM6529SST	OM6529SSV
描述	Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6	Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6
厂商名称	Omnirel Corp	Omnirel Corp
包装说明	HERMETIC SEALED, METAL, SIP-6	HERMETIC SEALED, METAL, SIP-6
Reach Compliance Code	unknown	unknown
其他特性	HIGH SPEED	HIGH SPEED
外壳连接	ISOLATED	ISOLATED
最大集电极电流 (IC)	15 A	15 A
集电极-发射极最大电压	1000 V	1000 V
配置	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
JESD-30 代码	R-MSFM-T6	R-MSFM-T6
元件数量	2	2
端子数量	6	6
封装主体材料	METAL	METAL
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
晶体管应用	POWER CONTROL	POWER CONTROL
晶体管元件材料	SILICON	SILICON
标称断开时间 (toff)	200 ns	200 ns
标称接通时间 (ton)	50 ns	50 ns

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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