Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 包装说明 | FLANGE MOUNT, R-MSFM-D3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 最大集电极电流 (IC) | 70 A |
| 集电极-发射极最大电压 | 1200 V |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| JESD-30 代码 | R-MSFM-D3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | SOLDER LUG |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | MOTOR CONTROL |
| 晶体管元件材料 | SILICON |
| OM45L120SBT | OM60L60SBV | 2SC2673 | OM45L120SBV | |
|---|---|---|---|---|
| 描述 | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 | Silicon NPN transistor in a TO-92 Plastic Package | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 |
| 是否无铅 | 含铅 | 含铅 | - | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | - | International Rectifier （ Infineon ） |
| 包装说明 | FLANGE MOUNT, R-MSFM-D3 | FLANGE MOUNT, R-MSFM-D3 | - | FLANGE MOUNT, R-MSFM-D3 |
| 针数 | 3 | 3 | - | 3 |
| Reach Compliance Code | compliant | compliant | - | compliant |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | - | ISOLATED |
| 最大集电极电流 (IC) | 70 A | 75 A | - | 70 A |
| 集电极-发射极最大电压 | 1200 V | 600 V | - | 1200 V |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| JESD-30 代码 | R-MSFM-D3 | R-MSFM-D3 | - | R-MSFM-D3 |
| JESD-609代码 | e0 | e0 | - | e0 |
| 元件数量 | 1 | 1 | - | 1 |
| 端子数量 | 3 | 3 | - | 3 |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C |
| 封装主体材料 | METAL | METAL | - | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified |
| 表面贴装 | NO | NO | - | NO |
| 端子面层 | TIN LEAD | TIN LEAD | - | TIN LEAD |
| 端子形式 | SOLDER LUG | SOLDER LUG | - | SOLDER LUG |
| 端子位置 | SINGLE | SINGLE | - | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 晶体管应用 | MOTOR CONTROL | MOTOR CONTROL | - | MOTOR CONTROL |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
