OM6031SC: 产品描述Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,; 产品类别分立半导体晶体管; 文件大小37KB，共4页; 制造商Omnirel Corp

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OM6031SC概述

Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,

OM6031SC规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Omnirel Corp
Reach Compliance Code	unknown
其他特性	HIGH RELIABILITY
雪崩能效等级（Eas）	1200 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V
最大漏极电流 (Abs) (ID)	22 A
最大漏极电流 (ID)	22 A
最大漏源导通电阻	0.27 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-258AA
JESD-30 代码	R-MSFM-P3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	165 W
最大脉冲漏极电流 (IDM)	85 A
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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OM6025SC OM6027SC OM6031SC

OM6026SC OM6028SC OM6032SC

POWER MOSFETS IN HERMETIC

ISOLATED JEDEC TO-258AA SIZE 6 DIE

400V Thru 1000V, Up To 26 Amp N-Channel,

Size 6 MOSFETs, High Energy Capability

FEATURES

•

Isolated Hermetic Metal Package

Size 6 Die, High Energy

Fast Switching, Low Drive Current

Ease of Paralleling For Added Power

Low R

DS(on)

Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits. This series also features avalanche high energy capability

at elevated temperatures.

MAXIMUM RATINGS

PART NUMBER

OM6025SC/OM6032SC

OM6026SC/OM6031SC

OM6027SC/OM6028SC

400

500

1000

DS(ON)

.20

.27

1.30

(Amp)

3.1

SCHEMATIC

4 11 R2

Supersedes 1 07 R1

3.1 - 97

OM6031SC相似产品对比

	OM6031SC	OM6028SC	OM6036NM	OM6037NM	OM6034NM	OM6035NM	OM6032SC
描述	Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,	Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,	Power Field-Effect Transistor, 15A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3	Power Field-Effect Transistor, 5A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3	Power Field-Effect Transistor, 35A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3	Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3	Power Field-Effect Transistor, 24A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V	1000 V	500 V	1000 V	100 V	200 V	400 V
最大漏极电流 (Abs) (ID)	22 A	10 A	11 A	4 A	30 A	25 A	24 A
最大漏极电流 (ID)	22 A	10 A	15 A	5 A	35 A	30 A	24 A
最大漏源导通电阻	0.27 Ω	1.3 Ω	0.4 Ω	3 Ω	0.065 Ω	0.095 Ω	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MSFM-P3	R-MSFM-P3	R-CDSO-N3	R-CDSO-N3	R-CDSO-N3	R-CDSO-N3	R-MSFM-P3
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	METAL
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	165 W	165 W	100 W	100 W	100 W	100 W	165 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	YES	YES	YES	YES	NO
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG	PIN/PEG	NO LEAD	NO LEAD	NO LEAD	NO LEAD	PIN/PEG
端子位置	SINGLE	SINGLE	DUAL	DUAL	DUAL	DUAL	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Omnirel Corp	-	-	-	Omnirel Corp	Omnirel Corp	Omnirel Corp
最大脉冲漏极电流 (IDM)	85 A	40 A	65 A	-	105 A	60 A	92 A
包装说明	-	-	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	-

OM6031SC

OM6031SC概述

OM6031SC规格参数

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