OM11N60SA
OM11N55SA
POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
600V & 550V, 11 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. The device breakdown ratings provide a substantial
voltage margin for stringent applications such as 270 VDC aircraft power and/or
rectified 230 VAC power (line operation). They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in applications such as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM11N60
OM11N55
V
DS
600V
550V
R
DS(on)
.50
.44
I
D(MAX)
11A
11A
3.1
SCHEMATIC
DRAIN
GATE
SOURCE
4 11 R1
Supersedes 2 04 R0
3.1 - 19
3.1
OM11N60SA - OM11N55SA
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM11N60SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
.47
Current
1
11.0
0.1
0.2
2.0
600
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM11N55SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
11.0
0.1
0.2
2.0
550
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
± 100
0.25
1.0
V
nA
mA
mA
A
3.1
.50
1.0
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
V
4.0
±100
0.25
1.0
V
nA
mA
mA
A
3.3
.37
.44
.88
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward
Transductance
1
5.0
3000
440
220
55
75
225
135
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5.5 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5
W
, R
L
= 30
W
(MOSFET) switching times are
essentially independent of
operating temperature.
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.0
3000
440
220
55
75
225
135
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5.5 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5
W
, R
L
= 30
W
(MOSFET) switching times are
essentially independent of
operating temperature.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
- 52
- 1.4
700
A
V
ns
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
- 11
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
- 11
- 52
- 1.4
700
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
V
ns
T
C
= 25 C, I
S
= -11 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
(W )
3.1 - 20
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -11 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
OM11N60SA - OM11N55SA
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
V
DGR
V
DS
I
D
I
D
I
DM
P
D
P
D
Parameter
Drain Source Voltage
Drain Gate Voltage (R
GS
= 1.0 M )
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Max. Power Dissipation @ T
C
= 25°C
Max. Power Dissipation @ T
C
= 100°C
Linear Derating Factor Jct. to Case
Linear Derating Factor Jct. to Ambient
T
J
, T
stg
Operating and Storage Temp. Range
Lead Temperature
(1/16" from case for 10 sec.)
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
OM11N60
600
600
11
7.2
52
125
50
1.0
.020
OM11N55
550
550
11
7.2
52
125
50
1.0
.020
Units
V
V
A
A
A
W
W
W/°C
W/°C
°C
°C
-55 to 150
300
300
THERMAL RESISTANCE
(Maximum at T
A
= 25°C)
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient (Free Air Operation)
1.0
50
1.0
50
°C/W
°C/W
3.1
3.1 - 21
OM11N60SA - OM11N55SA
MECHANICAL OUTLINES
.144 DIA.
.545
.535
.050
.040
.685
.665
.800
.790
.550
.530
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
.150 TYP.
TO-254 AA Package
.940
.740
.540
.200
.100
2 PLCS.
.040
.260
MAX
3.1
.290
.125
2 PLCS.
.250
.125 DIA.
2 PLS.
.540
.500
MIN.
.150
.300
.040 DIA.
3 PLCS.
.150
Omnirel AZ Package
For Z-Pack configuration, add letter “Z” to part number,
Example - OMXXXXSAZ
Standard Products are supplied with glass feedthroughs, for ceramic feedthroughs, add letter “C” to part number,
Example - OMXXXXCSA
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