电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

OM6060SB

产品描述Power Field-Effect Transistor, 34A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3
产品类别分立半导体    晶体管   
文件大小29KB,共2页
制造商Omnirel Corp
下载文档 详细参数 选型对比 全文预览

OM6060SB概述

Power Field-Effect Transistor, 34A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

OM6060SB规格参数

参数名称属性值
厂商名称Omnirel Corp
包装说明HERMETIC SEALED PACKAGE-3
Reach Compliance Codeunknown
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置COMPLEX
最小漏源击穿电压800 V
最大漏极电流 (Abs) (ID)34 A
最大漏极电流 (ID)34 A
最大漏源导通电阻0.3 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-CSFM-D3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)570 W
最大脉冲漏极电流 (IDM)78 A
认证状态Not Qualified
表面贴装NO
端子形式SOLDER LUG
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

下载PDF文档
Sect. 3.1 data sheets
8/7/00
11:52 AM
Page 107
OM6056SB OM6058SB OM6060SB
Preliminary Data Sheet
OM6057SB OM6059SB OM6061SB
POWER MOSFETS IN A HERMETIC ISOLATED
POWER BLOCK PACKAGE
High Current, High Voltage 100V Thru 1000V,
Up To 190 Amp N-Channel, Size 7 MOSFETs
FEATURES
Size 7 Die, High Energy
Rugged Package Design
Solder Terminals
Very Low R
DS(on)
Fast Switching, Low Drive Current
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
technology combined with a package designed specifically for high efficiency, high current
applications. They are ideally suited for Hi-Rel requirements where small size, high
performance and high reliability are required, and in applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS
@ 25°C
PART NUMBER
OM6056SB
OM6057SB
OM6058SB
OM6059SB
OM6060SB
OM6061SB
PIN CONNECTION
AND SCHEMATIC
V
DS
100 V
200 V
500 V
600 V
800 V
1000 V
R
DS(on)
.008
.018
.095
.140
.300
.500
I
D
(Continuous)
190 A
105 A
58 A
48 A
34 A
18 A
3.1
MECHANICAL OUTLINE
4 11 R0
3.1 - 107

OM6060SB相似产品对比

OM6060SB OM6057SB OM6061SB 2SA1774 OM6058SB OM6056SB
描述 Power Field-Effect Transistor, 34A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 Power Field-Effect Transistor, 105A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 SOT-523 Plastic-Encapsulate Transistors Power Field-Effect Transistor, 58A I(D), 500V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 Power Field-Effect Transistor, 190A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3
包装说明 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 - HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3
Reach Compliance Code unknown unknown unknown - unknown unknown
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY
外壳连接 ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED
配置 COMPLEX COMPLEX COMPLEX - COMPLEX COMPLEX
最小漏源击穿电压 800 V 200 V 1000 V - 500 V 100 V
最大漏极电流 (Abs) (ID) 34 A 105 A 18 A - 58 A 190 A
最大漏极电流 (ID) 34 A 105 A 18 A - 58 A 190 A
最大漏源导通电阻 0.3 Ω 0.018 Ω 0.5 Ω - 0.095 Ω 0.008 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-CSFM-D3 R-CSFM-D3 R-CSFM-D3 - R-CSFM-D3 R-CSFM-D3
元件数量 1 1 1 - 1 1
端子数量 3 3 3 - 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C - 150 °C 150 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 570 W 570 W 570 W - 570 W 570 W
最大脉冲漏极电流 (IDM) 78 A 250 A 42 A - 130 A 440 A
认证状态 Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
表面贴装 NO NO NO - NO NO
端子形式 SOLDER LUG SOLDER LUG SOLDER LUG - SOLDER LUG SOLDER LUG
端子位置 SINGLE SINGLE SINGLE - SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON - SILICON SILICON
ACPI电源管理程序
ACPI就是AdvancedConfigurationandPowerInterface的缩写,意思是“高级配置与电源接口”。这是英特尔、微软和东芝共同开发的一种电源管理标准。在ACPI电源管理方式下,根据CPU、内存、二级缓 ......
zbz0529 电源技术
PIC16F913编程时PIR1的SSPIF不能被设置
各位大虾,我在用PIC16F913编程时PIR1的SSPIF不能被设置,其他位都可以设置,不知道是为什么,请教各位啊,急!!!我是用maplab sim仿的。如能赐教,不甚感激!我的邮箱是txjs06@163.com,谢谢 ......
977845 Microchip MCU
跪求~o~!!!!!!!!!!!!!
主PCB板的布局对RX接收模块对信号的接收有什么影响,怎么样改进才能减少主板对接收信号的干扰~~~...
mark245 模拟电子
求助,这几个灯是啥型号的灯,第一次见
本帖最后由 往事随风飘散 于 2021-7-31 17:17 编辑 ...
往事随风飘散 PCB设计
关于MC34063,补一个关于 开关频率选择 的问题
在MC34063的参数计算中,开关频率不知道该如何选择。 用的是加外部开关管的扩流形式。电路形式如下: 频率的确定对于进一步确定电感大小、峰值电流等都有直接影响。 MC34063的开关频率在0 ......
辛昕 电源技术
千兆光纤收发器传输距离测试问题
本帖最后由 Kileo 于 2016-12-16 13:25 编辑 手头有个千兆光纤收发器的项目,已经可以实现光纤收发了,现在要测试光纤的传输距离,选用的光模块是1310nm波长的20Km的SC接口单模双纤模块,相 ......
Kileo 测试/测量

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2709  2578  327  165  2303  44  57  13  15  45 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved