Power Field-Effect Transistor, 34A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3
| 参数名称 | 属性值 |
| 厂商名称 | Omnirel Corp |
| 包装说明 | HERMETIC SEALED PACKAGE-3 |
| Reach Compliance Code | unknown |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | COMPLEX |
| 最小漏源击穿电压 | 800 V |
| 最大漏极电流 (Abs) (ID) | 34 A |
| 最大漏极电流 (ID) | 34 A |
| 最大漏源导通电阻 | 0.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CSFM-D3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 570 W |
| 最大脉冲漏极电流 (IDM) | 78 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | SOLDER LUG |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |

| OM6060SB | OM6057SB | OM6061SB | 2SA1774 | OM6058SB | OM6056SB | |
|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 34A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 105A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 | SOT-523 Plastic-Encapsulate Transistors | Power Field-Effect Transistor, 58A I(D), 500V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 190A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 |
| 包装说明 | HERMETIC SEALED PACKAGE-3 | HERMETIC SEALED PACKAGE-3 | HERMETIC SEALED PACKAGE-3 | - | HERMETIC SEALED PACKAGE-3 | HERMETIC SEALED PACKAGE-3 |
| Reach Compliance Code | unknown | unknown | unknown | - | unknown | unknown |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED |
| 配置 | COMPLEX | COMPLEX | COMPLEX | - | COMPLEX | COMPLEX |
| 最小漏源击穿电压 | 800 V | 200 V | 1000 V | - | 500 V | 100 V |
| 最大漏极电流 (Abs) (ID) | 34 A | 105 A | 18 A | - | 58 A | 190 A |
| 最大漏极电流 (ID) | 34 A | 105 A | 18 A | - | 58 A | 190 A |
| 最大漏源导通电阻 | 0.3 Ω | 0.018 Ω | 0.5 Ω | - | 0.095 Ω | 0.008 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CSFM-D3 | R-CSFM-D3 | R-CSFM-D3 | - | R-CSFM-D3 | R-CSFM-D3 |
| 元件数量 | 1 | 1 | 1 | - | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | - | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 570 W | 570 W | 570 W | - | 570 W | 570 W |
| 最大脉冲漏极电流 (IDM) | 78 A | 250 A | 42 A | - | 130 A | 440 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | - | NO | NO |
| 端子形式 | SOLDER LUG | SOLDER LUG | SOLDER LUG | - | SOLDER LUG | SOLDER LUG |
| 端子位置 | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | SILICON | SILICON |
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