SBR1020 THRU SBR1060
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 10.0Amperes
VOLTAGE 20 to 60 Volts
TO-220A
.412
(10.5)
MAX.
.180
3.8 f +.2
HOLE THRU (4.6)
.248
(6.3) .595
(15.1)
MAX.
.550
(14.0)
.158
(4.0) MIN.
MAX.
.200
(5.08)
+
.108
(2.75)
.040
(1.0)
MAX.
.051 MAX.
(1.3)
.040 MAX.
(1.0)
.050
(1.27)
Mechanical Data
· Case : JEDEC TO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08ounce, 2.24 grams
PIN 1
+
CASE
PIN 2
Case Positive
+
CASE
PIN 2
Case Negative
Suffix "R"
PIN 1
.120
(3.05)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking Voltage
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125℃
I
R
Rθ
JC
T
J
T
STG
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
I
FSM
SBR1020
20
14
20
SBR1030
30
21
30
SBR1040
40
28
40
10.0
20.0
150.0
SBR1050
50
35
50
SBR1060
60
42
60
Units
Volts
Volts
Volts
Amps
Amps
Amps
V
F
0.70
1.0
30
2.5
-65 to +150
-65 to +150
0.80
Volts
mA
℃/W
℃
℃
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBR1020 THRU SBR1060
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
12
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
175
150
PEAK FORWARD SURGE
CURRENT (AMPERES)
10
8
6
4
2
0
0
20
40
60
80
100
120
150
LEAD TEMPERATURE (℃)
──
SBR1050-SBR1060
- - - SBR1020-SBR1040
RESISTIVE OR INDUCTIVE LOAD
125
100
75
50
25
0.1
1
NUMBER OF CYCLES AT 60Hz
10
100
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
T
J
=125℃
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
T
J
=125℃
INSTANTANEOUS FORWARD CURRENT (AMPERES)
10
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
1
T
J
=25℃
PULSE WIDTH=300
1% DUTY CYCLE
㎲
1
T
J
=75℃
0.1
0.1
──
SBR1050-SBR1060
- - - SBR1020-SBR1040
0.01
T
J
=25℃
──
SBR1050-SBR1060
- - - SBR1020-SBR1040
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
4000
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL IMPEDANCE,℃/ W
JUNCTION CAPACITANCE (pF)
10
1000
1
──
SBR1050-SBR1060
- - - SBR1020-SBR1040
100
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
嵌入式系统
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