PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE650R479A
0.4 W L, S-BAND POWER GaAs MES FET
DESCRIPTION
The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high
linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power
• High Linear Gain
: P
O (1 dB)
= +26 dBm typ.
: 14 dB typ.
• High Power Added Efficiency: 45% typ. @V
DS
= 6 V, I
Dset
= 100 mA, f = 1.9 GHz
ORDERING INFORMATION (PLAN)
Part Number
NE650R479A-T1
79A
Package
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE650R479A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
I
D
I
GF
I
GR
P
T
T
ch
T
stg
Ratings
15
–7
0.6
12
12
2.5
150
–65 to +150
Unit
V
V
A
mA
mA
W
°C
°C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13671EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998
NE650R479A
RECOMMENDED OPERATION LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
V
DS
Gcomp
T
ch
Test Conditions
MIN.
TYP.
6.0
MAX.
6.0
3.0
+125
Unit
V
dB
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, Unless otherwise specified, using NEC standard test fixture.)
Characteristics
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Output Power at 1 dB Gain
Compression Point
Drain Current
Power Added Efficiency
Linear Gain
Note 1
Symbol
I
DSS
V
p
BV
gd
Test Conditions
V
DS
= 2.5 V, V
GS
= 0 V
V
DS
= 2.5 V, I
D
= 2 mA
I
gd
= 2 mA
–2.5
13
MIN.
TYP.
0.35
–0.5
MAX.
Unit
A
V
V
R
th
P
O (1 dB)
Channel to Case
f = 1.9 GHz, V
DS
= 6.0 V
Rg = 30
Ω
I
Dset
= 100 mA (RF OFF)
Note 2
13.0
30
26.0
50
°C/W
dBm
I
D
140
45
14.0
mA
%
dB
η
add
G
L
Notes 1.
Pin = 0 dBm
2.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Preliminary Data Sheet
NE650R479A
79A Package Dimensions (Unit: mm)
1.5
±0.2
4.2 max.
Source
Source
Gate
Drain
Gate
Drain
5.7 max.
1.0 max.
0.6
±0.15
0.4
±0.15
5.7 max.
0.8
±0.15
4.4 max.
0.8 max.
3.6
±0.2
0.9
±0.2
0.2
±0.1
Bottom View
79A Package Recommended P.C.B. Layout (Unit: mm)
4.0
1.7
Stop up the hole with a rosin
or something to avoid solder
flow.
Drain
Gate
5.9
1.2
Source
through hole
φ
0.2
×
33
0.5
0.5
0.5
6.1
Preliminary Data Sheet
1.0
1.2 max.
5
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