December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
Features
-7.5 A, -30 V. R
DS(ON)
= 0.030
Ω
@ V
GS
= -10 V
R
DS(ON)
= 0.045
Ω
@ V
GS
= -4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
______________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDT456P
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
-30
±20
±7.5
±20
(Note 1a)
(Note 1b)
(Note 1c)
V
V
A
P
D
Maximum Power Dissipation
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
NDT456P Rev. F
Electrical Characteristics
(T
Symbol
Parameter
OFF CHARACTERISTICS
A
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= -24 V, V
GS
= 0 V
T
J
= 55°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= - 250 µA
T
J
= 125°C
V
GS
= -10 V, I
D
= -7.5 A
T
J
= 125°C
V
GS
= - 4.5 V, I
D
= -6 A
-30
-1
-10
100
-100
V
µA
µA
nA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
-1
-0.5
-1.5
-1.1
0.026
0.035
0.041
-3
-2.6
0.03
0.054
0.045
V
Static Drain-Source On-Resistance
Ω
I
D(on)
G
fs
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
= -10 V , V
DS
= - 5 V
V
GS
= -4.5 V, V
DS
= - 5 V
V
GS
= -10 V, I
D
= -7.5 A
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
-20
-10
13
1440
905
355
A
S
pF
pF
pF
20
120
130
130
67
ns
ns
ns
ns
nC
nC
nC
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
(Note 2)
V
DD
= -15 V, I
D
= -7 A,
V
GEN
= -10 V, R
GEN
= 12
Ω
10
65
70
70
V
DS
= -10 V,
I
D
= -7.5 A, V
GS
= -10 V
47
5
12
NDT456P Rev. F
Electrical Characteristics
(T
Symbol
Parameter
A
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Notes:
1.
P
D
(
t
)
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
=
T
J
−T
A
R
θJA
(t)
-2.5
(Note 2)
A
V
ns
V
GS
= 0 V, I
S
= - 2.5 A
- 0.85
-1.2
140
V
GS
= 0 V, I
F
= - 2.5 A dI
F
/dt = 100 A/µs
=
T
J
−T
A
R
θJC
+R
θCA
(t)
=
I
2
(
t
) ×
R
DS(ON)@T
J
D
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment,
typical R
θ
JA
is found to be:
a. 42
o
C when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C when mounted on a 0.066in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.00123in
2
pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT456P Rev. F
Typical Electrical Characteristics
-20
I
D
, DRAIN-SOURCE CURRENT (A)
-16
R
DS(on)
, NORMALIZED
-6.0
-5.0
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-4.5
-4.0
-3.5
2.5
V
GS
=-3.5V
2
-4.0
-4.5
1.5
-12
-8
-3.0
-5.0
-7.0
-4
1
-10
-2.5
0
0
V
DS
-1
-2
-3
0.5
0
-4
-8
-12
-16
-20
I
D
, DRAIN CURRENT (A)
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1 .5
2.5
DRAIN-SOURCE ON-RESISTANCE
I
D
=-7.5A
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
2
V
1 .2 5
GS
= -10V
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
1.5
TJ = 125°C
25°C
1
1
-55°C
0.5
0 .7 5
0 .5
-50
0
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
-4
-8
-12
-16
-20
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
-20
1.2
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
=- 10V
, DRAIN CURRENT (A)
-16
T = -55°C
25
J
125
V
GS(th)
, NORMALIZED
V
DS
= V
GS
1.1
I
D
=- 250µA
1
-12
0.9
-8
0.8
D
-4
I
0.7
0
-0.8
-1.6
V
GS
-2.4
-3.2
-4
0.6
-50
-25
, GATE TO SOURCE VOLTAGE (V)
0
25
50
75
100
T , JUNCTION TEM PERATURE (°C)
J
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDT456P Rev. F
Typical Electrical Characteristics
1 .1
20
I
D
=- 250µA
DRAIN-SOURCE BREAKDOWN VOLTAGE
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
5
1
1 .0 8
1 .0 6
1 .0 4
1 .0 2
1
0 .9 8
0 .9 6
0 .9 4
-5 0
TJ = 125°C
25°C
-55°C
BV
DSS
, NORMALIZED
0.1
0.01
0.001
-2 5
0
T
J
25
50
75
100
, JU N CTION T EM PERA T U RE (°C)
125
150
0.0001
0
0.2
-V
SD
0.4
0.6
0.8
1
1.2
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
4000
-V
GS
, GATE-SOURCE VOLTAGE (V)
3000
CAPACITANCE (pF)
2000
10
I
D
= -7.5A
8
V
DS
=- 5V
-10V
-20V
Ciss
Coss
6
1000
4
500
400
300
200
0.1
Crss
f = 1 MHz
V
GS
= 0V
0.2
0.5
1
2
5
10
20
30
2
0
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
-V
DD
V
IN
D
t
on
R
L
V
OUT
V
OUT
DUT
10%
t
off
t
r
90%
t
d(on)
t
d(off)
90%
t
f
V
GS
R
GEN
10%
90%
G
S
V
IN
10%
50%
50%
PULSE W IDTH
INVERTED
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDT456P Rev. F
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