BL
FEATURES
GALAXY ELECTRICAL
SBLB2530CT - - - SBLB25100CT
VOLTAGE RANGE:
30
---
100
V
CURRENT:
25
A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
D
2
PAK
0.421(10.69)
0.380(9.65)
0.190(4.83)
0.172(4.37)
0.055(1.40)
0.045(1.14)
3
0.055(1.40)
0.045(1.14)
0.364(9.25)
0.325(8.25)
1
2
0.625(15.88)
0.575(14.60)
MECHANICAL DATA
Case:JEDEC D PAK,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.087 ounces,2.2 gram
Mounting position: Any
2
0.045(1.14)
0.020(0.51)
0.220(5.58)
0.180(4.58)
PIN1
PIN2
0.35(8.89)ref.
0.110(2.79)
0.090(2.29)
0.025(0.64)
0.012(0.30)
K-HEATSINK
0.115(2.92)
0.080(2.03)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SBLB
SBL B SBLB SBLB SBLB SBLB SBLB SBLB
2530CT 2535CT 2540CT 2545CT 2550CT 2560CT 2580CT 25100CT
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T
C
=95
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load T
J
=125
Maximum instantaneous forw ard voltage
@ 12.5 A
Maximum reverse current
@T
C
=25
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
30
21
30
35
25
35
40
28
40
45
32
45
25
50
35
50
60
42
60
80
56
80
100
70
100
I
FSM
V
F
I
R
R
θ
JC
T
J
T
STG
0.57
250
A
0.75
1.0
50
2.0
-55--- + 150
-55--- + 150
0.85
V
mA
/W
at rated DC blocking voltage @T
C
=100
Typical thermal resistance
(Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
www.galaxycn.com
Document Number 0267044
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
SBLB2530CT- - -SBLB25100CT
FIG.2 -- FORWARD DERATING CURVE
250
25
200
2
0
AMPERES
8.3ms Single Half Sine Wave
T
J
=125
15
150
1
0
100
5
50
0
25
50
75
100
125
0
1
1
50
10
100
NUMBER OF CYCLES AT 60H
Z
CASE
TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MICRO AMPERES
10
Tc=100
1.0
2
0
0
1
0
0
SBLB2530CT-SBLB2545CT
SBLB2580CT-SBLB25100CT
10
SBLB2550CT-SBLB2560CT
T
C
=25
0.1
T
J
= 2 5
P u ls e w id t h = 3 0 0
1 % D u t y C y c le
s
1
.1
.3
.5
.7
.9
1 .1
1 .3
1 .5
1 .7
1 .9
2 .1
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
www.galaxycn.com
Document Number 0267044
BL
GALAXY ELECTRICAL
2.
微控制器 MCU
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