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MB84VD21081EM-70PBS-E1: 产品描述Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56; 产品类别存储存储; 文件大小923KB，共53页; 制造商SPANSION; 官网地址http://www.spansion.com/; 标准

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MB84VD21081EM-70PBS-E1概述

Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56

MB84VD21081EM-70PBS-E1规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SPANSION
零件包装代码	BGA
包装说明	TFBGA,
针数	56
Reach Compliance Code	compliant
其他特性	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8
JESD-30 代码	R-PBGA-B56
JESD-609代码	e1
长度	7.2 mm
内存密度	16777216 bit
内存集成电路类型	MEMORY CIRCUIT
内存宽度	16
功能数量	1
端子数量	56
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	3.3 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	TIN SILVER COPPER
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
宽度	7 mm

MB84VD21081EM-70PBS-E1相似产品对比

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描述	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56	Memory Circuit, 1MX16, CMOS, PBGA56, PLASTIC, FBGA-56
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,
针数	56	56	56	56	56	56	56	56
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compli
其他特性	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANISED AS 128K X 16 OR 256K X 8, FLASH IS ALSO CONFIGURABLE AS 2M X 8
JESD-30 代码	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56
JESD-609代码	e1	e1	e1	e1	e1	e1	e1	e1
长度	7.2 mm	7.2 mm	7.2 mm	7.2 mm	7.2 mm	7.2 mm	7.2 mm	7.2 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bi
内存集成电路类型	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1
端子数量	56	56	56	56	56	56	56	56
字数	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	40	40	40	40	40	40	40	40
宽度	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm
厂商名称	SPANSION	-	SPANSION	SPANSION	SPANSION	SPANSION	SPANSION	SPANSION

MB84VD21081EM-70PBS-E1

MB84VD21081EM-70PBS-E1概述

MB84VD21081EM-70PBS-E1规格参数

MB84VD21081EM-70PBS-E1相似产品对比

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