DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., G
a
= 16.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., G
a
= 9.5 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
<R>
ORDERING INFORMATION
Part Number
NESG3031M05
Order Number
NESG3031M05-A
Package
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
NESG3031M05-T1 NESG3031M05-T1-A
(Pb-Free)
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
12.0
4.3
1.5
35
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10414EJ04V0DS (4th edition)
Date Published December 2008 NS
Printed in Japan
The mark <R> shows major revised points.
2003, 2008
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG3031M05
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Noise Figure (3)
Associated Gain (1)
Associated Gain (2)
Associated Gain (3)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
Output 3rd Order Intercept Point
⏐S
21e
⏐
NF
NF
NF
G
a
G
a
G
a
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 6 mA
−
−
220
−
−
300
100
100
380
nA
nA
−
V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
V
CE
= 2 V, I
C
= 6 mA, f = 2.4 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 2.4 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 5.8 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 5.8 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
6.0
−
−
−
−
−
7.5
−
11.0
−
−
8.5
0.6
0.95
1.1
16.0
10.0
9.5
0.15
14.0
13.0
18.0
−
−
−
1.5
−
−
−
0.25
−
−
−
dB
dB
dB
dB
dB
dB
dB
pF
dB
dBm
dBm
MSG
Note 3
P
O (1 dB)
OIP
3
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
T1K
220 to 380
2
Data Sheet PU10414EJ04V0DS
NESG3031M05
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
250
Mounted on glass epoxy PWB
(1.08 cm
2
×
1.0 mm (t))
200
0.3
f = 1 MHz
0.2
150
100
0.1
50
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
Collector Current I
C
(mA)
V
CE
= 1 V
V
CE
= 2 V
1
0.1
0.01
0.001
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
200
μ
A
30
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
10
40
μ
A
I
B
= 20
μ
A
V
CE
= 3 V
1
0.1
0.01
0.001
20
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10414EJ04V0DS
3
NESG3031M05
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
100
DC Current Gain h
FE
1
100
10
0.1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
30
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
V
CE
= 1 V
f = 2 GHz
V
CE
= 3 V
25
20
15
10
5
DC Current Gain h
FE
100
10
0.1
1
10
100
0
1
10
Collector Current I
C
(mA)
100
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
30
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
25
20
15
10
5
0
1
V
CE
= 2 V
f = 2 GHz
25
20
15
10
5
0
1
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10414EJ04V0DS
NESG3031M05
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
MSG
20
15
10
|S
21e
|
2
5
0
MAG
V
CE
= 1 V
I
C
= 20 mA
30
25
20
MAG
15
10
5
0
|S
21e
|
2
MSG
MSG
MAG
V
CE
= 2 V
I
C
= 20 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
1
10
Frequency f (GHz)
100
1
10
Frequency f (GHz)
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
MAG
15
10
5
0
|S
21e
|
2
MSG
MSG
MAG
V
CE
= 3 V
I
C
= 20 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
15
|S
21e
|
2
10
5
0
–5
MSG
MAG
V
CE
= 1 V
f = 2.4 GHz
1
10
Frequency f (GHz)
100
1
10
Frequency f (GHz)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
MSG
20
15
10
5
0
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
MSG
20
15
10
5
0
V
CE
= 3 V
f = 2.4 GHz
MAG
V
CE
= 2 V
f = 2.4 GHz
MAG
|S
21e
|
2
|S
21e
|
2
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10414EJ04V0DS
5
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