DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.95 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., G
a
= 9.5 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 15.0 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
NESG3031M14
NESG3031M14-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
12.0
4.3
1.5
35
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10415EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2004
NESG3031M14
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
S
21e
NF
NF
G
a
G
a
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 6 mA
−
−
220
−
−
300
100
100
380
nA
nA
−
V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 5.8 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 5.8 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
6.5
−
−
−
7.5
−
12.0
−
−
9.0
0.95
1.1
10.0
9.5
0.15
15.0
13.0
18.0
−
−
1.5
−
−
0.25
−
−
−
dB
dB
dB
dB
dB
pF
dB
dBm
dBm
MSG
Note 3
P
O (1 dB)
OIP
3
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
zJ
220 to 380
2
Data Sheet PU10415EJ02V0DS
NESG3031M14
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
250
Mounted on glass epoxy PWB
(1.08 cm
2
×
1.0 mm (t))
200
0.3
f = 1 MHz
0.2
150
100
0.1
50
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
Collector Current I
C
(mA)
V
CE
= 1 V
V
CE
= 2 V
1
0.1
0.01
0.001
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
200
µ
A
30
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
10
40
µ
A
I
B
= 20
µ
A
V
CE
= 3 V
1
0.1
0.01
0.001
20
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10415EJ02V0DS
3
NESG3031M14
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
DC Current Gain h
FE
100
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
V
CE
= 1 V
f = 2 GHz
V
CE
= 3 V
25
20
15
10
5
DC Current Gain h
FE
100
10
0.1
1
10
100
0
1
10
Collector Current I
C
(mA)
100
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
Gain Bandwidth Product f
T
(GHz)
25
20
15
10
5
0
1
V
CE
= 2 V
f = 2 GHz
25
20
15
10
5
0
1
V
CE
= 3 V
f = 2 GHz
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10415EJ02V0DS
NESG3031M14
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
0
V
CE
= 1 V
I
C
= 20 mA
MSG
MAG
30
25
20
15
10
|S
21e
|
2
5
0
MAG
MSG
MSG
MAG
V
CE
= 2 V
I
C
= 20 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
|S
21e
|
2
1
10
Frequency f (GHz)
100
1
10
Frequency f (GHz)
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
|S
21e
|
2
5
0
MAG
MSG
MSG
MAG
V
CE
= 3 V
I
C
= 20 mA
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
MSG
20
15
|S
21e
|
2
10
5
0
MAG
V
CE
= 1 V
f = 2.4 GHz
1
10
Frequency f (GHz)
100
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
MSG
20
15
10
5
0
|S
21e
|
2
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
MSG
20
15
10
5
0
|S
21e
|
2
V
CE
= 3 V
f = 2.4 GHz
MAG
V
CE
= 2 V
f = 2.4 GHz
MAG
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10415EJ02V0DS
5
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