SB706D-40
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low current rectification
3
Features
• High reliability
• Low reverse current
1
2
Marking Code: "ZE"
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current ( t = 8.3 ms)
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
Value
45
40
30
200
125
- 55 to + 125
Unit
V
V
mA
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
Reverse Current
at V
R
= 10 V
Reverse Breakdown Voltage
at I
R
= 10 µA
Capacitance between Terminals
at V
R
= 1 V, f = 1 MHz
Symbol
V
F
I
R
V
(BR)R
C
T
Min.
-
-
45
-
Typ.
-
-
-
2
Max.
0.37
1
-
-
Unit
V
µA
V
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
SB706D-40
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
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