PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50
Ω
are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
PACKAGE DIMENSIONS
(unit: mm)
0.5±0.1
2.5MIN.
C1.5 4PLACES
SOURCE
R1.6 2PLACES
GATE
2.4
12.9±0.2
3.2
6.45±0.05
DRAIN
17.0±0.2
21.0±0.3
10.7
2.5MIN.
SELECTION CHART
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
+0.1
0.1
–0.05
5.0MAX.
0.2MAX.
2.6±0.2
1.6
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
12.0
FEATURES
• Internally matched to 50
Ω
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
4W/8W C-BAND POWER-GaAs FET NEZ Series
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
RATINGS
NEZ-4D, 4DD
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
V
GD
I
D
I
G
P
T
*
Tch
T
stg
15
– 12
– 18
4.5
25
25
175
– 65 to + 175
NEZ-8D, 8DD
15
–12
– 18
9.0
50
50
175
– 65 to + 175
V
V
V
A
mA
W
˚C
˚C
CHARACTERISTIC
SYMBOL
UNIT
*T
C
= 25 ˚C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
SYMBOL
I
DSS
Part No.
NEZ-4D
NEZ-8D, 8DD
Pinch-off Voltage
V
P
NEZ-4D, 4DD
NEZ-8D, 8DD
Trans-Conductance
g
m
NEZ-4D, 4DD
NEZ-8D, 8DD
Gate to Drain Voltage
B
VGD0
NEZ-4D, 4DD
NEZ-8D, 8DD
Thermal Resistance
R
th
NEZ-4D, 4DD
NEZ-8D, 8DD
MIN.
1.0
2.0
– 3.5
– 3.5
—
—
20
20
—
—
TYP.
2.3
4.5
– 2.0
– 2.0
1300
2600
22
22
5.0
2.5
MAX.
3.5
7.0
– 0.5
– 0.5
—
—
—
—
6.0
3.0
˚C/W
V
mS
V
V
DS
= 2.5 V, I
DS
= 15 mA
V
DS
= 2.5 V, I
DS
= 30 mA
V
DS
= 2.5 V, I
DS
= 1 A
V
DS
= 2.5 V, I
DS
= 2 A
I
GD
= 15 mA
I
GD
= 30 mA
Channel to Case
UNIT
A
TEST CONDITIONS
V
DS
= 2.5 V, V
GS
= 0 V
2
4W/8W C-BAND Power-GaAs FET NEZ Series
4W PERFORMANCE SPECIFICATIONS (T
A
= 25 ˚C, Z
P1dB
PART NUMBER
(dBm)
*1
S
= ZL = 50
Ω
)
IM
3
(dBc)
*4
GL
(dB)
IDS
(A)
*2
GL
(dB)
*3, 4
η
add
(%)
V
DS
TEST CONDITIONS
I
DS
(RF OFF)
(V)
10
10
10
10
10
10
(A)
0.8
0.8
0.8
0.8
0.8
0.8
FREQUENCY IM
3
TEST
BAND
(GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
FREQ.
(GHz)
*5
4.2
5.0
6.45
7.2
7.7
8.5
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP.
NEZ3642-4D
35.5
36.5
36.5
36.5
36.5
36.5
36.5
10.0
9.5
9.0
8.0
7.5
7.0
11.0
10.5
10.0
9.0
8.5
8.0
1.2
1.2
1.2
1.2
1.2
1.2
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
– 45 – 42
– 45 – 42
– 45 – 42
– 45 – 42
– 45 – 42
– 45 – 42
43
40
37
35
33
33
NEZ4450-4D, 4DD 35.5
NEZ5964-4D, 4DD 35.5
NEZ6472-4D, 4DD 35.5
NEZ7177-4D, 4DD 35.5
NEZ7785-4D, 4DD 35.5
Notes *1
Output power at 1dB gain compression point
*2
IDS values are specified at P1dB point.
*3
Gain flatness
*4
Applies to – 4DD option only
*5
IM
3
test conditions:
f = 10 MHz, 2 tones test, P
O
= 26dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
(Ω)
200
V
DS
max.
(V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3
4W/8W C-BAND POWER-GaAs FET NEZ Series
8W PERFORMANCE SPECIFICATIONS (T
A
= 25 ˚C, Z
P1dB
PART NUMBER
(dBm)
*1
S
= ZL = 50
Ω
)
IM
3
(dBc)
*4
GL
(dB)
IDS
(A)
*2
GL
(dB)
*3, 4
η
add
(%)
V
DS
TEST CONDITIONS
I
DS
(RF OFF)
(V)
10
10
10
10
10
10
(A)
1.6
1.6
1.6
1.6
1.6
1.6
FREQUENCY IM
3
TEST
BAND
(GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
FREQ.
(GHz)
*5
4.2
5.0
6.45
7.2
7.7
8.5
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP.
NEZ3642-8D, 8DD 38.5
NEZ4450-8D, 8DD 38.5
NEZ5964-8D, 8DD 38.5
NEZ6472-8D, 8DD 38.5
NEZ7177-8D, 8DD 38.5
NEZ7785-8D, 8DD 38.5
39.5
39.5
39.5
39.5
39.5
39.5
10.0
9.5
8.5
7.5
7.0
6.5
11.0
10.5
9.5
8.5
8.0
7.5
2.4
2.4
2.4
2.4
2.4
2.4
3.0
3.0
3.0
3.0
3.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
– 45 – 42
– 45 – 42
– 45 – 42
– 45 – 42
– 45 – 42
– 45 – 42
40
37
35
32
30
30
Notes *1
Output power at 1dB gain compression point
*2
IDS values are specified at P1dB point.
*3
Gain flatness
*4
Applies to – 8DD option only
*5
IM
3
test conditions:
f = 10 MHz, 2 tones test, P
O
= 29dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
(Ω)
100
V
DS
max.
(V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
4
4W/8W C-BAND Power-GaAs FET NEZ Series
TYPICAL CHARACTERISTICS
(T
A
= 25 ˚C)
NEZ3642-4D
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
110
100
P
T
- Power Dissipation - W
P
out
(dBm)
I
D
(A)
2
35
OUTPUT POWER vs. INPUT POWER
Test Conditions:
Freq = 3.9 (GHz),
V
DS
= 10.0 (V), I
DS
= 0.8 (A),
P
out
: P
in
= 27.0 (dBm),
G
L
: P
in
= 20.0 (dBm),
R
g
= 200 (Ω)
P
out
90
80
70
60
50
40
30
20
10
0
0
25
–4D/–4DD
–8D/–8DD
Infinite Heat sink
1
30
I
D
EFF
(%)
50
40
30
20
10
0
0
25
EFF
50 75 100 125 150 175 200
T
C
- Case Temperature - ˚C
15
20
25
P
in
- Input Power - dBm
NEZ3642-8D/8DD
P
out
(dBm)
I
D
40
(A)
3
35
I
D
2
30
1
EFF
25
0
20
25
30
P
in
- Input Power - dBm
EFF
(%)
50
40
30
20
10
0
OUTPUT POWER vs. INPUT POWER
Test Conditions:
Freq = 3.9 (GHz),
V
DS
= 10.0 (V), I
DS
= 1.6 (A),
P
out
: P
in
= 31.0 (dBm),
G
L
: P
in
= 20.0 (dBm),
R
g
= 100 (Ω)
NEZ4450-4D/4DD
P
out
(dBm)
I
D
(A)
3
35
OUTPUT POWER vs. INPUT POWER
Test Conditions:
Freq = 4.7 (GHz), V
DS
= 10.0 (V),
I
D
= 0.80 A, R
g
= 200
Ω
P
out
P
out
2
30
I
D
1
25
EFF
EFF
(%)
50
40
30
20
10
0
0
15
20
25
P
in
- Input Power - dBm
30
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
