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NE8500200-WB: 产品描述RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,; 产品类别分立半导体晶体管; 文件大小42KB，共8页; 制造商NEC(日电)

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NE8500200-WB概述

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,

NE8500200-WB规格参数

参数名称	属性值
厂商名称	NEC(日电)
Reach Compliance Code	unknown
其他特性	HIGH RELIABILITY
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	10 V
最大漏极电流 (ID)	2.5 A
FET 技术	METAL SEMICONDUCTOR
最高频带	C BAND
JESD-30 代码	R-CDFM-F2
元件数量	1
端子数量	2
工作模式	DEPLETION MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE

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PRELIMINARY DATA SHEET

GaAs MES FET

NE85002 SERIES

2 W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W

partially matched devices. Each packaged device has an input lumped element matching network.

NE8500200 is the six-cells recessed gate chip used in ‘95’ package.

The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

has a PHS. (Plated Heat Sink)

NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

• Class A operation

• High power output

• High reliability

110

100

240

PHYSICAL DIMENSIONS

NE8500200 (CHIP) (unit:

640

100

1800

100

SELECTION CHART

PACKAGE CODE-95 (unit: mm)

PERFORMANCE SPECIFIED

PART NUMBER

Pout (**)

(dBm)

(**)

(dB)

USABLE

FREQUENCY

(GHz)

2.0 to 10

2.5 ±0.3 DIA

SOURCE

0.7 ±0.1

GATE

4.0 MIN.

NE8500200(*)

NE8500200-WB(*)

NE8500200-RG(*)

NE8500295-4

NE8500295-6

NE8500295-8

33.8 min

8.0 min

5.9 ±0.2

33.8 min

33.5 min

10.5 min

9.5 min

8.0 min

3.5 to 5.5

5.5 to 7.5

7.5 to 8.5

DRAIN

14.0 ±0.3

18.5 MAX.

2.1 ±0.15 0.1

4.5 MAX.

0.2 MAX.

7.2 ±0.2

1.0

GB, RG indicate a type of containers for chips.

WB: black carrier, RG: ring,

Specified at the condition at the last page.

Document No. P10969EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

NE8500200-WB相似产品对比

	NE8500200-WB	NE8500200-RG-A	NE8500200-RG	NE8500200-WB-A	NE8500200-A	NE8500200
描述	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE
厂商名称	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant	compliant
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	10 V	10 V	9 V	10 V	10 V	10 V
最大漏极电流 (ID)	2.5 A	2.5 A	2.5 A	2.5 A	2.5 A	2.5 A
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND
JESD-30 代码	R-CDFM-F2	R-XUUC-N	R-XUUC-N6	R-XUUC-N	R-XUUC-N	R-XUUC-N
元件数量	1	1	1	1	1	1
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	FLAT	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	UPPER	UPPER	UPPER	UPPER	UPPER
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
是否Rohs认证	-	符合	不符合	符合	符合	不符合
包装说明	-	UNCASED CHIP, R-XUUC-N	UNCASED CHIP, R-XUUC-N6	UNCASED CHIP, R-XUUC-N	UNCASED CHIP, R-XUUC-N	DIE
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	-
JESD-609代码	-	e6	e0	e6	e6	e0
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
端子面层	-	TIN BISMUTH	TIN LEAD	TIN BISMUTH	TIN BISMUTH	TIN LEAD
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

NE8500200-WB

NE8500200-WB概述

NE8500200-WB规格参数

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