GENERAL PURPOSE
DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW C
RSS
:
0.02 pF (TYP)
• HIGH POWER GAIN:
20 dB (TYP) AT 900 MHz
• LOW NF:
1.1 dB TYP AT 900 MHz
• L
G1
= 1.0
µm,
L
G2
= 1.5
µm,
W
G
= 400
µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
• LOW PACKAGE HEIGHT:
1.0 mm MAX
Power Gain, G
PS
(dB)
20
NE25118
POWER GAIN AND NOISE FIGURE
vs.
DRAIN TO SOURCE VOLTAGE
G
PS
10
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
10
I
D
= 10 mA
f = 900 MHz
5
NF
0
0
0
5
10
DESCRIPTION
The NE25118 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a 4 pin super mini-mold
package, (SOT-343 type). Maximum package height of 1.0
mm makes the NE25118 an ideal device for PCMCIA card
applications.
Drain to Source Voltage, V
DS
(V)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
G
PS
BV
DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
I
G1SS
I
G2SS
|Y
FS
|
C
ISS
C
RSS
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
µA
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
µA
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
µA
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
18
0.5
25
1.0
0.02
16
13
5
-3.5
-3.5
10
10
35
1.5
0.03
20
40
MIN
NE25118
18
TYP
1.1
20
MAX
2.5
California Eastern Laboratories
Noise Figure, NF (dB
)
NE25118
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
DS
V
G1S
V
G2S
I
D
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate 1 to Source Voltage
Gate 2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
13
20
25
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
10
-4.5
-4.5
I
DSS
120
125
-55 to +125
15
G
PS
5
10
5
NF
0
Note:
1. Operation in excess of anyone of these parameters may result
in
permanent damage.
0
0
5
10
Drain Current, I
D
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
250
30
V
DS
= 5V
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
Total Power Dissipation, P
T
(mW)
200
FREE AIR
Drain Current, I
D
(mA)
V
G2S
= 1.0V
20
150
120
100
0.5 V
10
0V
50
-0.5 V
0
0
0
25
50
75
100
125
-2.0
-1.0
0
+1.0
Ambient Temperature, T
A
(°C)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
Forward Transfer Admittance, |Y
FS
| (mS)
Forward Transfer Admittance, |Y
FS
| (mS)
30
V
DS
= 5V
f = 1kHz
30
Gate 1 to Source Voltage, V
G1S
(V)
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 5 V
f = 1 kHz
V
G2S
= 1.0 V
20
20
V
G2S
= 1.0
10
0.5 V
-0.5 V
0
-2.0
-1.0
0
+1.0
0V
10
V
G2S
= 0.5 V
0
0
10
20
30
Gate 1 to Source Voltage, V
G1S
(V)
Drain Current, I
D
(mA)
Noise Figure, NF (dB)
Power Gain, G
P
(dB)
NE25118
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
2.0
V
DS
= 5 V
f = 1kHz
POWER GAIN AND NOISE FIGURE
vs.
GATE 2 TO SOURCE VOLTAGE
30
V
DS
= 5 V
V
G2S
= 1 V
I
D
= 10 mA
f = 900 MHz
1
10
Input Capacitance, C
ISS
(pF)
15
G
PS
V
G2S
= 1 V at I
D
= 10 mA
1
0
5
-15
NF
-30
1.0
V
G2S
= 1 V at I
D
= 5 mA
1
-45
-1.0
0
+1.0
0
-2.0
-1.0
0
+1.0
+2.0
-3.0
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
NE25118
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
FREQUENCY
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
MAG
0.999
1.000
0.998
0.974
1.005
0.942
0.968
0.920
0.952
0.898
0.915
0.879
S
11
ANG
-3.3
-7.2
-9.3
-13.4
-15.7
-19.1
-22.2
-25.2
-28.9
-29.4
-35.1
-35.2
MAG
2.359
2.389
2.313
2.233
2.420
2.300
2.332
2.229
2.447
2.303
2.348
2.367
S
21
ANG
177.2
169.3
164.4
160.0
158.4
150.0
145.5
141.5
136.8
131.1
125.8
123.5
MAG
0.006
0.004
0.000
0.004
0.007
0.003
0.004
0.008
0.004
0.001
0.004
0.000
S
12
ANG
-122.3
123.0
-145.0
79.2
29.7
65.0
45.5
80.1
8.3
50.9
71.4
91.1
MAG
0.969
0.981
0.979
0.967
0.999
0.958
0.997
0.957
0.999
0.968
0.984
0.989
S
22
ANG
-1.3
-2.9
-3.3
5.6
-5.8
-7.7
-8.5
-9.4
-12.5
-11.1
-14.8
-13.0
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
Noise Figure, NF (dB)
Power Gain, G
P
(dB)
NE25118
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 18
(SOT-343)
2.1
±
0.2
1.25
±
0.1
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
ORDERING INFORMATION
PART
NUMBER
NE25118
NE25118-T1
AVAILABILITY
Bulk up to 3K
3K/Reel
2.0
±
0.2
0.65
2
3 0.65
1.3
0.60
0.65
1
+0.10
0.4 -0.05
0.3
4
0.9
±
0.1
0 to 0.1
+0.10
0.15 -0.05
PIN
CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
Note: All dimensions are typical unless otherwise specified.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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PRINTED IN USA ON RECYCLED PAPER -8/98
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