October 1996
NDP5060L / NDB5060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
26 A, 60 V. R
DS(ON)
= 0.05
Ω
@ V
GS
= 5 V
R
DS(ON)
= 0.035
Ω
@ V
GS
= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP5060L
60
60
±16
±25
26
78
68
0.45
-65 to 175
NDB5060L
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
P
D
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
T
J
,T
STG
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
NDP5060L Rev.A
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche Current
V
DD
= 30 V, I
D
= 26 A
100
26
mJ
A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 13 A
T
J
= 125°C
V
GS
= 10 V, I
D
= 13 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 13 A
V
DS
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
26
16
1
0.65
1.4
1
0.042
0.07
0.031
60
250
1
100
-100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
2
1.5
0.05
0.08
0.035
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
840
230
75
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 24 V,
I
D
= 26 A, V
GS
= 5 V
V
DD
= 30 V, I
D
= 26 A,
V
GS
= 5 V, R
GEN
= 30
Ω
R
GS
= 30
Ω
13
200
45
102
17
4
10
20
400
80
200
24
nS
nS
nS
nS
nC
nC
nC
NDP5060L Rev.A
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
S
= 13 A
(Note 1)
V
GS
= 0 V, I
F
= 26 A,
dI
F
/dt = 100 A/µs
0.9
54
2.1
26
78
1.3
120
8
A
A
V
ns
A
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.2
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP5060L Rev.A
Typical Electrical Characteristics
50
V
GS
= 10V
2
6.0
DRAIN-SOURCE ON-RESISTANCE
I
D
, DRAIN-SOURCE CURRENT (A)
5.0
40
1.8
V
GS
= 3.0 V
4.5
30
1.6
3.5
4.0
4.5
4.0
R
DS(on)
, NORMALIZED
1.4
20
3.5
1.2
5.0
6.0
3.0
10
1
10
0.8
2.5
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
5
0.6
0
10
I
D
20
30
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
2
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13A
V
GS
= 5V
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.75
V
GS
= 5 V
1.5
T = 125°C
J
R
DS(ON)
, NORMALIZED
1.5
25°C
1
1.25
R
DS(on)
1
-55°C
0.5
0.75
0.5
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
175
0
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
20
1.3
V
GS(th)
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 5V
16
I
D
, DRAIN CURRENT (A)
T = -55°C
J
25°C
125°C
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
= V
GS
I
D
= 250µA
12
8
4
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
125
150
175
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
NDP5060L Rev.A
Typical Electrical Characteristics
(continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
1.1
I
S
, REVERSE DRAIN CURRENT (A)
20
10
5
1
V
GS
= 0V
T J = 125°C
BV
DSS
, NORMALIZED
1.05
0.1
25°C
1
0.01
-55°C
0.95
0.001
0.9
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0.0001
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1
1.2
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
1500
10
Ciss
V
GS
, GATE-SOURCE VOLTAGE (V)
1000
I
D
= 26A
8
V
DS
= 12V
24V
48V
CAPACITANCE (pF)
500
6
Coss
200
4
f = 1 MHz
100
V
GS
= 0V
Crss
2
50
1
2
5
10
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3
30
50
0
0
10
20
Q
g
, GATE CHARGE (nC)
30
40
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
V
DD
t
d(on)
t
on
t
r
90%
t
o f f
t
d(off)
90%
t
f
V
IN
D
R
L
V
O U T
DUT
V
GEN
V
O U T
10%
10%
INVERTED
R
GEN
R
GS
G
90%
V
IN
S
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDP5060L Rev.A
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