Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
参数名称 | 属性值 |
厂商名称 | Fairchild |
包装说明 | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V |
最大漏极电流 (ID) | 5 A |
最大漏源导通电阻 | 0.065 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G4 |
元件数量 | 1 |
端子数量 | 4 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 15 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
NDT452APD84Z | NDT452AP_J23Z | NDT452APS62Z | NDT452APL99Z | |
---|---|---|---|---|
描述 | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | MOSfet 功率 P-channel fet enhancement mode | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
厂商名称 | Fairchild | Fairchild | Fairchild | Fairchild |
配置 | SINGLE WITH BUILT-IN DIODE | Single Dual Drai | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
包装说明 | SMALL OUTLINE, R-PDSO-G4 | - | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code | unknown | - | unknown | unknown |
ECCN代码 | EAR99 | - | EAR99 | EAR99 |
外壳连接 | DRAIN | - | DRAIN | DRAIN |
最小漏源击穿电压 | 30 V | - | 30 V | 30 V |
最大漏极电流 (ID) | 5 A | - | 5 A | 5 A |
最大漏源导通电阻 | 0.065 Ω | - | 0.065 Ω | 0.065 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G4 | - | R-PDSO-G4 | R-PDSO-G4 |
元件数量 | 1 | - | 1 | 1 |
端子数量 | 4 | - | 4 | 4 |
工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | - | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | P-CHANNEL | - | P-CHANNEL | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 15 A | - | 15 A | 15 A |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified |
表面贴装 | YES | - | YES | YES |
端子形式 | GULL WING | - | GULL WING | GULL WING |
端子位置 | DUAL | - | DUAL | DUAL |
晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | - | SILICON | SILICON |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved