NTF2N08, NTF2N08L
Product Preview
80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
alternator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
(VGS = 0 Vdc, ID = 250
µAdc)
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150°C)
Gate–Body Leakage Current
(VGS =
±20
Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
NTF2N08
NTF2N08L
Static Drain–to–Source
On–Resistance
(ID = 1.5 Adc)
NTF3N08, VGS= 10 V
NTF3N08L, VGS = 5 V
VGS(th)
2.0
1.0
RDS(on)
3.0
1.5
4.0
2.0
mΩ
Vdc
V(BR)DSS
80
IDSS
–
–
IGSS
–
–
–
–
1.0
10
nAdc
±100
–
–
µAdc
Vdc
Symbol
Min
Typ
Max
Unit
http://onsemi.com
2 AMPERES
2N08 Typ RDS(on) = 195 mΩ
2N08L Typ RDS(on) = 210 mΩ
SOT–223
CASE 318E
STYLE 3
–
–
195
210
–
–
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2000
1
October, 2000 – Rev. 0
Publication Order Number:
NTF2N08/D
NTF2N08, NTF2N08L
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
S
1
2
B
D
L
G
J
C
0.08 (0003)
H
M
K
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H
0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
0
_
10
_
M
S
0.264
0.287
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
_
10
_
6.70
7.30
GATE
DRAIN
SOURCE
DRAIN
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and
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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Update 8/28/00 AS
NTF2N08/D
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