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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg
≤
0.20
µ
m
• Gate Width : Wg = 160
µ
m
ORDERING INFORMATION (PLAN)
Part Number
NE3210S01-T1
NE3210S01-T1B
Supplying Form
Tape & reel 1 000 pcs./reel
Tape & reel 4 000 pcs./reel
Marking
K
Remark
For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
–3.0
IDSS
100
165
125
–65 to +125
Unit
V
V
mA
µ
A
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Characteristics
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
5
–
TYP.
2
10
–
MAX.
3
15
0
Unit
V
mA
dBm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999
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