DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg
≤
0.20
µ
m
• Gate Width : Wg = 160
µ
m
ORDERING INFORMATION (PLAN)
Part Number
NE3210S01-T1
NE3210S01-T1B
Supplying Form
Tape & reel 1 000 pcs./reel
Tape & reel 4 000 pcs./reel
Marking
K
Remark
For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
–3.0
IDSS
100
165
125
–65 to +125
Unit
V
V
mA
µ
A
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Characteristics
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
5
–
TYP.
2
10
–
MAX.
3
15
0
Unit
V
mA
dBm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999
NE3210S01
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Characteristics
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
Test Conditions
V
GS
= –3 V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
DS
= 100
µ
A
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 10 mA
f = 12 GHz
MIN.
–
15
–0.2
40
–
12.0
TYP.
0.5
40
–0.7
55
0.35
13.5
MAX.
10
70
–2.0
–
0.45
–
Unit
µ
A
mA
V
mS
dB
dB
2
Data Sheet P14067EJ2V0DS00
NE3210S01
TYPICAL CHARACTERISTICS (T
A
= +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
Total Power Dissipation P
tot
(mW)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
200
Drain Current I
D
(mA)
80
150
60
V
GS
= 0 V
–0.2 V
20
–0.4 V
–0.6 V
100
40
50
0
50
100
150
200
250
0
1.0
Drain to Source Voltage V
DS
(V)
2.0
Ambient Temperature T
A
(°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
24
V
DS
= 2 V
Maximum Stable Gain MSG. (dB)
Maximum Available Gain MAG. (dB)
2
Forward Insertion Gain |S
21s
| (dB)
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
V
DS
= 2 V
I
D
= 10 mA
20
MSG.
MAG.
16
60
Drain Current I
D
(mA)
40
20
12
|S
21S
|
2
0
–2.0
–1.0
Gate to Source Voltage V
GS
(V)
0
8
4
1
2
4
6
8 10
14
20 30
Frequency f (GHz)
Data Sheet P14067EJ2V0DS00
3
NE3210S01
Gain Calculations
MSG. =
S
21
S
12
S
21
S
12
K=
1 + |
∆
|
2
– |S
11
|
2
– |S
22
|
2
2 |S
12
| |S
21
|
MAG. =
k
±
k
2
– 1
∆
= S
11
·S
22
– S
21
·S
12
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
24
V
DS
= 2 V
I
D
= 10 mA
20
Associated Gain G
a
(dB)
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
V
DS
= 2 V
f = 12 GHz
15
G
a
14
13
Associated Gain G
a
(dB)
G
a
Noise Figure NF (dB)
16
2.0
1.5
1.0
0.5
NF
12
11
1.0
12
0.5
NF
0
1
2
4
6
8 10
14
8
0
4
20 30
10
20
30
Drain Current I
D
(mA)
Frequency f (GHz)
4
Data Sheet P14067EJ2V0DS00
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