®
HIGH-SPEED BiCMOS
ECL STATIC RAM
4K (1K x 4-BIT) SRAM
Integrated Device Technology, Inc.
PRELIMINARY
IDT10474, IDT10A474
IDT100474, IDT100A474
IDT101474, IDT101A474
FEATURES:
• 1024-words x 4-bit organization
• Address access time: 2.7/3/3.5/4/4.5/5/7/8/10/15 ns
• Low power dissipation: 1000mW (typ.)
• Guaranteed Output Hold time
• Fully compatible with ECL logic levels
• Separate data input and output
• Corner and Center power pin pinouts
• Standard through-hole and surface mount packages
• Guaranteed-performance die available for MCMs/hybrids
• MIL-STD-883, Class B product available
DESCRIPTION:
The IDT10474(10A474), IDT100474(100A474) and
IDT101474(101A474) are 4,096-bit high-speed BiCMOS ECL
static random access memories organized as 1Kx4, with
separate data inputs and outputs. All I/Os are fully compatible
with ECL levels.
These devices are part of a family of asynchronous four-
bit-wide ECL SRAMs. This device is available in both the
traditional corner-power pinout, and "revolutionary" center-
power pin configurations. Because they are manufactured in
BiCMOS technology, power dissipation is greatly reduced
over equivalent bipolar devices. Low power operation pro-
vides higher system reliability and makes possible the use of
the plastic SOJ package for high-density surface mount
assembly.
The fast access time and guaranteed Output Hold time
allow greater margin for system timing variation. DataIN setup
time specified with respect to the trailing edge of Write Pulse
eases write timing allowing balanced Read and Write cycle
times.
FUNCTIONAL BLOCK DIAGRAM
A
0
V
CC
DECODER
4,096-BIT
MEMORY
ARRAY
V
EE
A
9
D
0
D
1
D
2
D
3
SENSE AMPS
AND READ/WRITE
CONTROL
Q
0
Q
1
Q
2
Q
3
WE
CS
2760 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE
©1992
Integrated Device Technology, Inc.
OCTOBER 1992
DSC-8022/3
1
IDT10474, IDT100474, IDT101474, IDT10A474, IDT100A474, IDT101A474
HIGH-SPEED BiCMOS ECL STATIC RAM 4K (1K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATIONS
D
1
D
2
D
3
Q
0
Q
1
V
CC
V
CCA
Q
2
Q
3
A
0
A
1
A
2
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
D
0
CS
WE
A
9
A
8
A
7
V
EE
A
6
NC
A
5
A
4
A
3
PACKAGES
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
Q
1
Q
0
D
3
D
2
D
1
D
0
CS
WE
A
9
A
8
A
7
VCC
A
Q
2
Q
3
A
0
A
1
A
2
A
3
A
4
A
5
NC
A
6
V
EE
400-Mil-Wide
CERDIP PACKAGE
D24-3
2760 drw 03
300-Mil-Wide
PLASTIC SOJ PACKAGE
SO24-4
2760 drw 04
Center Power
"A"
Top View
2760 drw 02a
Corner Power
"Non-A"
Top View
2760 drw 02b
PIN DESCRIPTIONS
Symbol
A
0
through A
9
D
0
through D
3
Q
0
through Q
3
Pin Name
Address Inputs
Data Inputs
Data Outputs
Write Enable Input
Chip Select Input (Internal pull down)
More Negative Supply Voltage
Less Negative Supply Voltage
2760 tbl 01
WE
CS
Hi-Rel Die
For Hybrid and MCM
Applications
2760 drw 05
V
EE
V
CC
LOGIC SYMBOL
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
DIP
Symbol
C
IN
C
OUT
Parameter
Input
Capacitance
Output
Capacitance
Typ.
4
6
Max.
—
—
SOJ
Typ.
3
3
Max.
—
—
Unit
pF
pF
2760 tbl 02
D
0
D
1
D
2
D
3
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
Q
0
Q
1
Q
2
Q
3
TRUTH TABLE
(1)
DataOUT
L
RAM Data
L
Function
Deselected
Read
Write
2760 tbl 03
CS
H
L
L
WE
X
H
L
A
8
A
9
CS
WE
2760 drw 06
NOTE:
1. H = HIGH, L = LOW, X = Don’t Care
2
IDT10474, IDT100474, IDT101474, IDT10A474, IDT100A474, IDT101A474
HIGH-SPEED BiCMOS ECL STATIC RAM 4K (1K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
A
Rating
Terminal Voltage
With Respect to GND
Operating
Temperature
10K
100K
101K
Ceramic
Plastic
Value
+0.5 to –7.0
0 to +75
0 to +85
0 to +75
–55 to +125
–65 to +150
–55 to +125
1.5
–50
Unit
V
°C
AC/DC ELECTRICAL OPERATING RANGES
I/O
10K
100K
V
EE
–5.2V
±
5%
–4.5V
±
5%
T
A
0 to +75°C, air flow exceeding 2 m/sec
0 to +85°C, air flow exceeding 2 m/sec
2760 tbl 05
101K –4.75V to –5.46V 0 to +75°C, air flow exceeding 2 m/sec
T
BIAS
T
STG
P
T
I
OUT
Temperature Under Bias
Storage
Temperatuure
°C
°C
W
mA
Power Dissipation
DC Output Current
(Output High)
NOTE:
2760 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (1)
10K
Symbol
V
OH
Parameter
Output HIGH Voltage
(V
IN
= V
IH(Max)
or V
IL(Min)
)
Output LOW Voltage
(V
IN
= V
IH(Max)
or V
IL(Min)
)
Output Threshold HIGH Voltage
(V
IN
= V
IH(Min)
or V
IL(Max)
)
Output Threshold LOW Voltage
(V
IN
= V
IH(Min)
or V
IL(Max)
)
Input HIGH Voltage
(Guaranteed Input Voltage
High for All Inputs)
Input LOW Voltage
(Guaranteed Input Voltage
Low for All Inputs)
Input HIGH Current
CS
V
IN
= V
IH(Max)
Others
Input LOW Current
V
IN
= V
IL(Min)
CS
Others
Supply Current
Min.
–1000
–960
–900
–1870
–1850
–1830
–1020
–980
–920
—
—
—
–1145
–1105
–1045
–1870
–1850
–1830
—
—
0.5
–50
–210
Max.
–840
–810
–720
–1665
–1650
–1625
—
—
—
–1645
–1630
–1605
–840
–810
–720
–1490
–1475
–1450
220
110
170
90
—
TA
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
—
—
—
—
—
100K/101K
Min.
–1025
Max.
–880
Unit
mV
V
OL
–1810
–1620
mV
V
OHC
–1035
—
mV
V
OLC
—
–1610
mV
V
IH
–1165
–880
mV
V
IL
–1810
–1475
mV
I
IH
—
—
0.5
–50
–190 (100K)
–210 (101K)
220
110
170
90
—
—
µA
µA
µA
µA
mA
I
IL
I
EE
NOTE:
1. RL = 50Ω to -2V, air flow exceeding 2 m/sec.
2760 tbl 05
3
IDT10474, IDT100474, IDT101474, IDT10A474, IDT100A474, IDT101A474
HIGH-SPEED BiCMOS ECL STATIC RAM 4K (1K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
AC TEST LOAD CONDITION
V
CC
(GND)
AC TEST INPUT PULSE
DATA
OUT
–0.9V
C*
80%
20%
50
Ω
–1.7V
t
R
t
F
t
R
= t
F
= 1.5ns typ.
0.01
µ
F
V
EE
–2.0V
*Includes probe and jig capacitance.
C < 5pF (2.7,3.0, 3.5nS speed grades)
C < 30pF (all other speed grades)
Note: All timing measurements are
referenced to 50% input levels.
2760 drw 07
2760 drw 08
RISE/FALL TIME
Symbol
tR
tF
Parameter
Output Rise Time
Output Fall Time
Min.
—
—
Typ.
1.5
1.5
Max.
—
—
Unit
ns
ns
2760 tbl 06
FUNCTIONAL DESCRIPTION
The IDT10474(10A474), IDT100474(100A474), and
IDT101474(101A474) BiCEMOS ECL static RAMs provide
high speed with low power dissipation typical of BiCMOS ECL.
These devices are available in both the traditional corner-
power pinout and the "revolutionary" center-power pinout for
reduced noise and improved system performance.
WRITE TIMING
To write data to the device, a Write Pulse need be formed
on the Write Enable input (WE) to control the write to the
SRAM array. While CS and ADDR must be set-up when WE
goes low, DataIN can settle after the falling edge of WE, giving
the data path extra margin. Data is written to the memory cell
at the end of the Write Pulse, and addresses and Chip Select
must be held after the rising edge of the Write Pulse to ensure
satisfactory completion of the cycle.
DataOUT is disabled (held LOW) during the Write Cycle. If
CS is held LOW (active) and addresses remain unchanged,
the Data OUT pins will output the written data after "Write
Recovery time" (t
WR
).
Because of the very short Write Pulse requirement, these
devices can be cycled as quickly for Writes as for Reads.
READ TIMING
The read timing on these asynchronous devices is straight-
forward. DataOUT is held LOW until the device is selected by
Chip Select (CS). The Address (ADDR) settles and data
appears on the output after time t
AA
. Note that DataOUT is
held for a short time (t
OH
) after the address begins to change
for the next access, then ambiguous data is on the bus until a
new time t
AA
.
4
IDT10474, IDT100474, IDT101474, IDT10A474, IDT100A474, IDT101A474
HIGH-SPEED BiCMOS ECL STATIC RAM 4K (1K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS
(Over the AC Operating Range)
S2.7
Symbol
t
ACS
t
RCS
t
AA
t
OH
Parameter
(1)
Chip Select Access Time
Chip Select Recovery Time
Address Access Time
Data Hold from Address
Change
Read Cycle
—
—
—
1.0
2.0
2.0
2.7
—
—
—
—
1.0
2.0
2.0
3.0
—
—
—
—
1.0
2.5
2.5
3.5
—
—
—
—
1.0
2.5
2.5
4.0
—
—
—
—
1.0
2.5
2.5
4.5
—
—
—
—
1.0
3.0
3.0
5.0
—
—
—
—
1.0
3.5
3.5
7.0
—
ns
ns
ns
ns
2760 tbl 07
S3
S3.5
S4
S4.5
S5
S7,8,10,15
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
NOTE:
1. Input and Output reference level is 50% point of waveform.
2. Output load capacitance, C < 5pF (2.7, 3.0, 3.5ns speed grades only), see "AC Test Load Condition" on previous page.
READ CYCLE GATED BY CHIP SELECT (1, 2)
CS
t
ACS
DATA
OUT
2670 drw 09
t
RCS
READ CYCLE GATED BY ADDRESS (1, 3)
ADDR
t
AA
t
OH
DATA
OUT
2670 drw 10
NOTE:
1. WE is HIGH for read cycle.
2. Address valid prior to or minimum tAA-tACS before CS active.
3. CS active prior to or minimum tAA-tACS after address valid.
5
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
