Cache SRAM, 64KX18, 8ns, CMOS, PQCC52
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Paradigm Technology Inc |
| 包装说明 | QCCJ, LDCC52,.8SQ |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 8 ns |
| 其他特性 | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE |
| I/O 类型 | COMMON |
| JESD-30 代码 | S-PQCC-J52 |
| JESD-609代码 | e0 |
| 内存密度 | 1179648 bit |
| 内存集成电路类型 | CACHE SRAM |
| 内存宽度 | 18 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 52 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 64KX18 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QCCJ |
| 封装等效代码 | LDCC52,.8SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 3.3/5,5 V |
| 认证状态 | Not Qualified |
| 最小待机电流 | 4.75 V |
| 最大供电电压 (Vsup) | 5.25 V |
| 最小供电电压 (Vsup) | 4.75 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| PDM44068S15JI | PDM44068S20JI | PDM44068S12JI | PDM44068S20J | PDM44068S15J | PDM44068S12J | PDM44068S10J | |
|---|---|---|---|---|---|---|---|
| 描述 | Cache SRAM, 64KX18, 8ns, CMOS, PQCC52 | Cache SRAM, 64KX18, 9ns, CMOS, PQCC52 | Cache SRAM, 64KX18, 6ns, CMOS, PQCC52 | Cache SRAM, 64KX18, 9ns, CMOS, PQCC52 | Cache SRAM, 64KX18, 8ns, CMOS, PQCC52 | Cache SRAM, 64KX18, 6ns, CMOS, PQCC52 | Cache SRAM, 64KX18, 5ns, CMOS, PQCC52 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc |
| 包装说明 | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | unknow | unknow |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 8 ns | 9 ns | 6 ns | 9 ns | 8 ns | 6 ns | 5 ns |
| 其他特性 | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 1179648 bit | 1179648 bit | 1179648 bit | 1179648 bit | 1179648 bi | 1179648 bi | 1179648 bi |
| 内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| 内存宽度 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 52 | 52 | 52 | 52 | 52 | 52 | 52 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 64KX18 | 64KX18 | 64KX18 | 64KX18 | 64KX18 | 64KX18 | 64KX18 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ |
| 封装等效代码 | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最小待机电流 | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| 最大供电电压 (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
| 最小供电电压 (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 最大待机电流 | - | - | - | 0.11 A | 0.11 A | 0.12 A | 0.12 A |
| 最大压摆率 | - | - | - | 0.36 mA | 0.36 mA | 0.36 mA | 0.36 mA |
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