VISHAY
BYG20
Vishay Semiconductors
Super Fast Avalanche SMD Rectifier
Features
•
•
•
•
•
•
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
15811
Applications
Surface mounting
Fast rectifier
Freewheeling diodes in SMPS and converters
Snubber diodes
Parts Table
Part
BYG20D
BYG20G
BYG20J
Type differentiation
V
R
= 200 V @ I
FAV
= 1.5 A
V
R
= 400 V @ I
FAV
= 1.5 A
V
R
= 600 V @ I
FAV
= 1.5 A
DO-214AC
DO-214AC
DO-214AC
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
Part
BYG20D
BYG20G
BYG20J
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I
(BR)R
= 1 A, T
j
= 25 °C
t
p
= 10 ms, half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
T
j
= T
stg
E
R
Value
200
400
600
30
1.5
- 55 to + 150
20
Unit
V
V
V
A
A
°C
mJ
Document Number 86009
Rev. 5, 07-Jan-03
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1
BYG20
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction lead
Junction ambient
Test condition
T
L
= const.
-
-
mounted on epoxy-glass hard
tissue
mounted on epoxy-glass hard
tissue, 50 mm
2
35
µm
Cu
mounted on Al-oxid-ceramic
(Al
2
O
3
), 50 mm 35
µm
Cu
2
VISHAY
Part
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse recovery time
I
F
= 1 A
I
F
= 1.5 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
Test condition
Part
Symbol
V
F
V
F
I
R
I
R
t
rr
Min
Typ.
Max
1.3
1.4
1
10
75
Unit
V
V
µA
µA
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
10.000
I
FAV
– Average Forward Current ( A )
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
16444
V
R
=V
RRM
half sinewave
R
thJA
v25K/W
I
F
– Forward Current ( A)
1.000
T
j
=150°C
0.100
T
j
=25°C
0.010
R
thJA
v125K/W
R
thJA
v150K/W
0
20
40
60
80
100 120 140 160
0.001
16443
V
F
– Forward Voltage ( V )
T
amb
– Ambient Temperature (
°C
)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
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2
Document Number 86009
Rev. 5, 07-Jan-03
VISHAY
BYG20
Vishay Semiconductors
600
t
rr
– Reverse Recovery Time ( ns )
100
V
R
= V
RRM
I
R
– Reverse Current (
m
A )
I
R
=0.5A, i
R
=0.125A
500
400
300
200
100
0
T
amb
=125°C
100°C
75°C
50°C
25°C
0
0.2
0.4
0.6
0.8
1.0
10
1
25
16445
50
75
100
125
T
j
– Junction Temperature (
°C
)
150
94 9343
I
F
– Forward Current ( A )
Figure 3. Reverse Current vs. Junction Temperature
Figure 6. Max. Reverse Recovery Time vs. Forward Current
200
P
R
– Reverse Power Dissipation ( mW )
70
V
R
= V
RRM
60
50
40
30
20
10
0
25
50
75
100
125
150
P
R
–Limit
@80%V
R
P
R
–Limit
@100%V
R
Q
rr
– Reverse Recovery Charge ( nC )
I
R
=0.5A, i
R
=0.125A
150
T
amb
=125°C
100
T
amb
=75°C
50
T
amb
=50°C
T
amb
=25°C
0
0.2
0.4
0.6
0.8
1.0
T
amb
=100°C
0
T
j
– Junction Temperature (
°C
)
94 9344
16446
I
F
– Forward Current ( A )
Figure 4. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 7. Max. Reverse Recovery Charge vs. Forward Current
30
f=1MHz
C
D
– Diode Capacitance ( pF )
25
20
15
10
5
0
0.1
1.0
10.0
100.0
16447
V
R
– Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 86009
Rev. 5, 07-Jan-03
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3
BYG20
Vishay Semiconductors
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
VISHAY
1000
125K/W DC
100
t
p
/T=0.5
t
p
/T=0.2
10
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
1
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
Single Pulse
94 9339
t
p
– Pulse Length ( s )
Figure 8. Thermal Response
Package Dimensions in mm
5.3 +0.2 / -0.4
4.4 +0.1 / -0.2
2.15 ± 0.15
ISO Method E
technical drawings
according to DIN
specifications
0.1 ± 0.07
3 +0.3 / -0.5
2.6 +0.2 / -0.3
1.5 +0.2 / -0.1
0.2
Plastic case JEDEC DO 214
similar to SMA
Cathode indicated
by
a
band
14275-1
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Document Number 86009
Rev. 5, 07-Jan-03
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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