Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
BPW 34 F
BPW 34 FS
BPW 34 FS (E9087)
Wesentliche Merkmale
•
•
•
•
Speziell geeignet für Anwendungen bei 950 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungsdichte
BPW 34 FS/(E9087); geeignet für Vapor-Phase
Löten und IR-Reflow Löten
Features
•
•
•
•
Especially suitable for applications of 950 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
BPW 34 FS/(E9087); suitable for vapor-phase
and IR-reflow soldering
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Gerätefernsteuerungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
2001-06-01
Applications
• IR remote control of hi-fi and TV sets, video
tape recorders, remote controls of various
equipment
• Photointerrupters
Typ
Type
BPW 34 F
BPW 34 FS
BPW 34 FS (E9087)
Bestellnummer
Ordering Code
Q62702-P929
Q62702-P1604
Q62702-P1826
2001-06-01
1
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Kennwerte
(
T
A
= 25
°C, λ
= 950 nm)
Charact
1)
eristics
Bezeichnung
Parameter
Fotostrom
Photocurrent
V
R
= 5 V,
E
e
= 1 mW/cm
2
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit
Spectral sensitivity
Quantenausbeute
Quantum yield
Leerlaufspannung,
E
e
= 0.5 mW/cm
2
Open-circuit voltage
2001-06-01
Symbol
Symbol
Wert
Value
– 40 … + 100
16
32
150
Einheit
Unit
°C
V
V
mW
T
op
;
T
stg
V
R
V
R
(
t
< 2 min)
P
tot
Symbol
Symbol
Wert
Value
50 (≥ 40)
Einheit
Unit
µA
I
p
λ
S max
λ
950
780 … 1100
nm
nm
A
L
×
B
L
×
W
ϕ
7.00
2.65
×
2.65
mm
2
mm
×
mm
±
60
2 (≤ 30)
0.59
0.77
330 (≥ 275)
Grad
deg.
nA
A/W
Electrons
Photon
mV
I
R
S
λ
η
V
O
2
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
Kennwerte
(
T
A
= 25
°C, λ
= 950 nm)
Charact
1)
eristics
(cont’d)
Bezeichnung
Parameter
Kurzschlußstrom,
E
e
= 0.5 mW/cm
2
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
Ω;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 800
µA
Durchlaßspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V
Nachweisgrenze,
V
R
= 10 V
Detection limit
1)
Symbol
Symbol
Wert
Value
25
20
Einheit
Unit
µA
ns
I
SC
t
r
,
t
f
V
F
C
0
TC
V
TC
I
NEP
1.3
72
– 2.6
0.18
4.3
×
10
– 14
V
pF
mV/K
%/K
W
-----------
-
Hz
cm
×
Hz
-------------------------
-
W
D*
6.2
×
10
12
2001-06-01
3
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
Relative Spectral Sensitivity
S
rel
=
f
(λ)
100
S
rel
%
80
10
2
V
O
10
3
120
100
OHF00368
Photocurrent
I
P
=
f
(
E
e
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
e
)
Ι
P
10
3
µ
A
OHF01097
Total Power Dissipation
P
tot
=
f
(
T
A
)
V
O
160
mW
P
tot
140
OHF00958
10
4
mV
60
10
1
10
2
80
60
40
10
0
Ι
P
10
1
40
20
20
0
700
800
900
1000
nm
λ
1200
10
-1 0
10
10
1
10
2
µ
W/cm
10
0
2
10
4
0
0
20
40
60
E
e
80 ˚C 100
T
A
Dark Current
I
R
=
f
(
V
R
),
E
= 0
4000
OHF00080
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
100
C
pF
80
OHF00081
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
10
3
OHF00082
Ι
R
pA
Ι
R
nA
10
2
3000
70
60
2000
50
40
30
10
1
1000
10
0
20
10
0
0
5
10
15
V
V
R
20
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
-1
0
20
40
60
80 ˚C 100
T
A
Directional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-06-01
4
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
Maßzeichnung
Package Outlines
BPW 34 F
5.4 (0.213)
Cathode marking
4.0 (0.157)
3.7 (0.146)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
4.9 (0.193)
4.5 (0.177)
0.8 (0.031)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
2.2 (0.087)
1.9 (0.075)
4.3 (0.169)
Chip position
0.6 (0.024)
1.8 (0.071)
1.4 (0.055)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
0.35 (0.014)
0.5 (0.020)
0.2 (0.008)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
0 ... 5˚
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
5.08 (0.200)
spacing
GEOY6643
BPW 34 FS
Chip position
1.2 (0.047)
1.1 (0.043)
0...0.1
(0...0.004)
0.3 (0.012)
1.1 (0.043)
0.9 (0.035)
0...5
˚
0.2 (0.008)
0.1 (0.004)
1.7 (0.067)
1.5 (0.059)
4.0 (0.157)
3.7 (0.146)
GEOY6863
6.7 (0.264)
6.2 (0.244)
4.5 (0.177)
4.3 (0.169)
0.9 (0.035)
0.7 (0.028)
1.8 (0.071)
±0.2 (0.008)
Photosensitive area
Cathode lead
2.65 (0.104) x 2.65 (0.104)
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2001-06-01
5
3.5 (0.138)
3.0 (0.118)
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