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JANHCA1N973D

产品描述Zener Diode, 8.2V V(Z), 2%, 1W, Silicon, Unidirectional,
产品类别分立半导体    二极管   
文件大小207KB,共27页
制造商Microsemi
官网地址https://www.microsemi.com
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JANHCA1N973D概述

Zener Diode, 8.2V V(Z), 2%, 1W, Silicon, Unidirectional,

JANHCA1N973D规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
Reach Compliance Codecompliant
ECCN代码EAR99
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-609代码e0
元件数量1
端子数量2
封装形式UNCASED CHIP
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Qualified
参考标准MIL-19500/115K
标称参考电压8.2 V
表面贴装YES
技术ZENER
端子面层Tin/Lead (Sn/Pb)
端子位置UNSPECIFIED
最大电压容差2%
工作测试电流31 mA

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 25 October 2006.
INCH-POUND
MIL-PRF-19500/117P
25 July 2006
SUPERSEDING
MIL-PRF-19500/117N
6 October 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH
1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1
THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided
for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for
each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and
as follows:
a. P
TL
= 500 mW, (DO-35) at T
L
= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175°C.
b. P
TEC
= 500 mW, (DO-213AA) at T
EC
= +125°C, derate to 0 at +175°C. -65°C
T
J
+175°C; -65°C
T
STG
+175°C.
c. P
T(PCB)
= 400mW, T
A
= 55°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5961
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