DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF861A
UHF power LDMOS transistor
Product specification
Supersedes data of 2000 Aug 04
2001 Feb 09
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Designed to withstand abrupt load mismatch errors
•
Source on underside eliminates DC isolators; reducing
common mode inductance
•
Designed for broadband operation (UHF band)
•
Internal input and output matching for high gain and
optimum broadband operation.
1
2
BLF861A
PINNING - SOT540A
PIN
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source connected to flange
DESCRIPTION
APPLICATIONS
•
Communication transmitter applications in the UHF
frequency range.
3
4
MBK777
5
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source 860 MHz test circuit.
MODE OF OPERATION
CW, class-AB
PAL BG (TV); class-AB
f
(MHz)
860
860 (ch 69)
V
DS
(V)
32
32
P
L
(W)
150
>150
typ. 170
(peak sync)
Top view
Fig.1 Simplified outline.
G
p
(dB)
>13.5
typ. 14.5
>14
η
D
(%)
>50
>40
∆G
p
(dB)
≤1
note 1
Note
1. Sync compression: input sync
≥
33%; output sync 27%.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
65
±15
18
318
+150
200
MAX.
V
V
A
W
°C
°C
UNIT
2001 Feb 09
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
mb
= 25
°C;
P
tot
= 318 W
BLF861A
VALUE
0.55
0.2
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C;
per section; unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
iss
C
oss
C
rss
Note
1. Capacitance values without internal matching.
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 1.5 mA
V
DS
= 10 V; I
D
= 150 mA
V
GS
= 0; V
DS
= 32 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 4 A
V
GS
= V
GSth
+ 9 V; I
D
= 4 A
MIN.
65
4
−
18
−
−
−
TYP.
−
−
−
−
−
4
160
82
40
6
MAX.
−
5.5
2.2
−
25
−
−
−
−
−
UNIT
V
V
µA
A
nA
S
mΩ
pF
pF
pF
V
GS
= 0; V
DS
= 32 V; f = 1 MHz
(1)
−
V
GS
= 0; V
DS
= 32 V; f = 1 MHz
(1)
−
V
GS
= 0; V
DS
= 32 V; f = 1 MHz
(1)
−
handbook, halfpage
100
Coss
(pF)
80
MLD510
60
40
20
0
0
10
20
30
40
50
VDS (V)
V
GS
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.2
Output capacitance as a function of
drain-source voltage; typical values per
section.
2001 Feb 09
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. T
h
= 25
°C;
R
th mb-h
= 0.15 K/W; unless otherwise specified.
MODE OF
OPERATION
CW; class-AB
2-tone; class-AB
PAL BG (TV); class-AB
f
(MHz)
860
f
1
= 860
f
1
= 860.1
860
(ch 69)
V
DS
(V)
32
32
32
I
DQ
(A)
1
1
1
P
L
(W)
150
150 (PEP)
> 150
typ. 170
(peak sync)
G
p
(dB)
>13.5
typ. 14.5
>14
>14
η
D
(%)
>50
>40
>40
d
Im
(dBc)
−
≤−25
−
∆G
p
(dB)
≤1
−
note 1
Note
1. Sync compression: input sync
≥
33%; output sync 27% measured in an 860 MHz test circuit.
Ruggedness in class-AB operation
The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 32 V; f = 860 MHz at rated load power.
The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load
mismatch errors under the nominal power condition.
handbook, halfpage
12
MCD871
handbook, halfpage
10
MCD872
zi
(Ω)
ZL
xi
(Ω)
5
RL
8
4
ri
0
XL
0
400
500
600
700
800
900
f (MHz)
−5
400
500
600
700
800
900
f (MHz)
CW, class-AB operation; V
DS
= 32 V; I
DQ
= 1 A;
P
L
= 170 W (total device); T
h
= 25
°C.
CW, class-AB operation; V
DS
= 32 V; I
DQ
= 1 A;
P
L
= 170 W (total device); T
h
= 25
°C.
Fig.3
Input impedance as a function of frequency
(series components); typical push-pull
values.
Fig.4
Load impedance as a function of frequency
(series components); typical push-pull
values.
2001 Feb 09
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
handbook, halfpage
20
MLD514
80
η
D
handbook, halfpage
0
MLD515
Gp
(dB)
15
η
D
10
Gp
dim
(dBc)
−20
d3
(%)
60
d5
40
−40
5
20
−60
0
0
100
0
200
300
PL (PEP) (W)
−80
0
100
200
300
PL (PEP) (W)
T
h
= 25
°C;
V
DS
= 32 V; I
DQ
= 1 A.
2-tone: f
1
= 860 MHz (−6 dB); f
2
= 860.1 MHz (−6 dB)
measured in an 860 MHz test circuit.
T
h
= 25
°C;
V
DS
= 32 V; I
DQ
= 1 A.
2-tone: f
1
= 860 MHz (−6 dB); f
2
= 860.1 MHz (−6 dB)
measured in an 860 MHz test circuit.
Fig.5
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.6
Intermodulation distortion as a function of
peak envelope output power; typical values.
handbook, halfpage
20
MLD516
80
η
D
Gp
(%)
60
Gp
(dB)
15
η
D
10
40
5
20
0
0
50
100
150
0
250
200
PL (W)
T
h
= 25
°C;
V
DS
= 32 V; I
DQ
= 1 A; CW, class-AB; f = 860 MHz;
measured in an 860 MHz test circuit.
Fig.7
Power gain and drain efficiency as functions
of load power; typical values.
2001 Feb 09
5
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