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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMZ7
NPN/PNP general purpose
transistors
Product data sheet
Supersedes data of 2001 Sep 25
2001 Nov 07
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
FEATURES
•
300 mW total power dissipation
•
Very small 1.6
×
1.2 mm ultra thin package
•
Self alignment during soldering due to straight leads
•
Low collector capacitance
•
Low V
CEsat
•
High current capabilities
•
Improved thermal behaviour due to flat leads
•
Reduced required PCB area
•
Reduced pick and place costs.
APPLICATIONS
•
Heavy duty battery powered equipment (automotive,
telecom and audio-video) such as motor and lamp
drivers
•
V
CEsat
critical applications such as latest low supply
voltage IC applications
•
All battery driven equipment, to save battery power.
DESCRIPTION
NPN/PNP low V
CEsat
transistor pair in a SOT666 plastic
package.
MARKING
TYPE NUMBER
PEMZ7
MARKING CODE
Z7
1
Top view
handbook, halfpage
6
PEMZ7
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
5
4
6
5
4
TR2
TR1
2
3
MAM456
1
2
3
Fig.1 Simplified outline (SOT666) and symbol.
2001 Nov 07
2
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MIN.
MAX.
PEMZ7
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
notes 1 and 2
VALUE
416
UNIT
K/W
total power dissipation
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
15
12
6
500
1
100
200
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
2001 Nov 07
3
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
200
−
TYP.
−
−
−
−
−
PEMZ7
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
f
T
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
TR1 (NPN)
TR2 (PNP)
C
c
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
−
−
4.4
−
6
10
pF
pF
V
CB
= 15 V; I
E
= 0
V
CB
= 15 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 2 V; I
C
= 10 mA
I
C
= 200 mA; I
B
= 10 mA
I
C
= 100 mA; V
CE
= 5 V;
f = 100 MHz
100
50
100
−
220
mV
nA
μA
nA
250
100
420
280
−
−
MHz
MHz
handbook, halfpage
600
MHC014
handbook, halfpage
(1)
1200
MLD672
hFE
500
IC
(mA)
800
(2)
(4)
(3)
(2)
(1)
400
(5)
(6)
300
(7)
(8)
200
(3)
400
(9)
100
(10)
0
10
−1
1
10
10
2
IC (mA)
10
3
0
0
2
4
6
8
10
VCE (V)
TR1 (NPN);
T
amb
= 25
°C.
TR1 (NPN);
V
CE
= 2 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
(1) I
B
= 4.60 mA
(2) I
B
= 4.14 mA
(3) I
B
= 3.68 mA
(4) I
B
= 3.22 mA
(5)
(6)
(7)
(8)
I
B
= 2.76 mA
I
B
= 2.30 mA
I
B
= 1.84 mA
I
B
= 1.38 mA
(9) I
B
= 0.92 mA
(10) I
B
= 0.46 mA
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
2001 Nov 07
4
FPGA/CPLD
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