• N channel FET switches with no parasitic diode to Vcc
−
Isolation under power-off conditions
−
No DC path to Vcc or GND
−
5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low R
ON
- 4Ω typical
Ω
• Flat R
ON
characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent R
ON
matching between channels
• Vcc operation: 2.3V to 3.6V
• High bandwidth - up to 500 MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in SSOP and TSSOP packages
IDTQS3VH16211
DESCRIPTION:
The QS3VH16211 HotSwitch is a 24-bit high bandwidth bus switch. The
QS3VH16211 has very low ON resistance, resulting in under 250ps
propagation delay through the switch. This device operates as a 24-bit bus
switch. When
1OE
is low, 1An is connected to 1Bn. When
2OE
is low, 2An
is connected to 2Bn. In the OFF and ON states, the switches are 5V-tolerant.
In the OFF state, the switches offer very high impedance at the terminals.
The combination of near-zero propagation delay, high OFF impedance,
and over-voltage tolerance makes the QS3VH16211 ideal for high perfor-
mance communications applications. It is also suitable for switching wide
digital buses.
The QS3VH16211 is characterized for operation from -40°C to +85°C.
APPLICATIONS:
•
•
•
•
•
Hot-swapping
10/100 Base-T, Ethernet LAN switch
Low distortion analog switch
Replaces mechanical relay
ATM 25/155 switching
FUNCTIONAL BLOCK DIAGRAM
1
A
1
1
B
1
2
A
1
2
B
1
1
A
12
1
B
12
2
A
12
2
B
12
1
OE
2
OE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
c
2002 Integrated Device Technology, Inc.
MARCH 2002
DSC-5883/5
IDTQS3VH16211
2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
NC
1
A
1
1
A
2
1
A
3
1
A
4
1
A
5
1
A
6
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Supply Voltage to Ground
DC Switch Voltage V
S
DC Input Voltage V
IN
AC Input Voltage (pulse width
≤20ns)
DC Output Current (max. current/pin)
Storage Temperature
Max.
– 0.5 to 4.6
– 0.5 to 5.5
– 0.5 to 5.5
–3
120
-65 to +150
Unit
V
V
V
V
mA
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
1
O E
2
O E
1
B
1
1
B
2
1
B
3
1
B
4
1
B
5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
TERM(2)
V
TERM(3)
V
TERM(3)
V
AC
I
OUT
T
STG
°
C
G ND
1
A
7
1
A
8
1
A
9
1
A
10
1
A
11
1
A
12
2
A
1
2
A
2
G ND
1
B
6
1
B
7
1
B
8
1
B
9
1
B
10
1
B
11
1
B
12
2
B
1
2
B
2
2
B
3
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
CC
terminals.
3. All terminals except V
CC
.
CAPACITANCE
Symbol
C
IN
C
I/O
C
I/O
Parameter
(1)
Control Inputs
(T
A
= +25 C, f = 1MHz, V
IN
= 0V, V
OUT
= 0V)
Typ.
3
4
8
Max.
5
6
12
Unit
pF
pF
pF
o
Quickswitch Channels (Switch OFF)
Quickswitch Channels (Switch ON)
V
CC
2
A
3
NOTE:
1. This parameter is guaranteed but not production tested.
G ND
2
A
4
2
A
5
2
A
6
2
A
7
2
A
8
2
A
9
2
A
10
2
A
11
2
A
12
G ND
2
B
4
2
B
5
2
B
6
2
B
7
2
B
8
2
B
9
2
B
10
2
B
11
2
B
12
PIN DESCRIPTION
Pin Names
xA
1
- xA
12
xB
1
- xB
12
1
OE
I/O
I/O
I/O
I
Bus A
Bus B
Description
-
2
OE
Data Select
FUNCTION TABLE
(1)
1
OE
2
OE
1
Ax
1
Bx
1
Bx
2
Ax
2
Bx
Function
1
Ax
1
Ax
2
Ax
L
L
L
H
L
H
to
1
Bx,
2
Ax to
2
Bx
to
1
Bx
to
2
Bx
Z
2
Bx
SSOP/ TSSOP
TOP VIEW
H
H
Z
Z
Z
Disconnect
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
Z = High-Impedence
2
IDTQS3VH16211
2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
(1)
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 3.3V ± 0.3V
Symbol
V
IH
V
IL
I
IN
I
OZ
I
OFF
R
ON
Parameter
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current (Control Inputs)
Off-State Current (Hi-Z)
Data Input/Output Power Off Leakage
Switch ON Resistance
Test Conditions
Guaranteed Logic HIGH
for Control Inputs
Guaranteed Logic HIGH
for Control Inputs
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
Min.
1.7
2
—
—
—
—
—
I
ON
= 30mA
I
ON
= 15mA
I
ON
= 30mA
I
ON
= 15mA
—
—
—
—
Typ.
(1)
—
—
—
—
—
—
—
6
7
4
5
Max.
—
—
0.7
0.8
±1
±1
±1
8
9
6
8
Ω
µA
µA
µA
V
Unit
V
≤
V
CC
0V
≤
V
OUT
≤
5V, Switches OFF
V
IN
or V
OUT
0V to 5V, V
CC
= 0V
V
CC
= 2.3V
V
CC
= 3V
V
IN
= 0V
V
IN
= 0V
V
IN
= 2.4V
(Typ. at V
CC
= 2.5V) V
IN
= 1.7V
0V
≤
V
IN
NOTE:
1. Typical values are at V
CC
= 3.3V and T
A
= 25°C, unless otherwise noted.
TYPICAL ON RESISTANCE vs V
IN
AT V
CC
= 3.3V
16
R
ON
(ohms)
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
IN
(Volts)
3
IDTQS3VH16211
2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
I
CCQ
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
Power Supply Current
(2,3)
per Input HIGH
Dynamic Power Supply Current
(4)
Test Conditions
(1)
V
CC
= Max., V
IN
= GND or V
CC
, f = 0
V
CC
= Max., V
IN
= 3V, f = 0 per Control Input
V
CC
= 3.3V, A and B Pins Open, Control Inputs
Toggling @ 50% Duty Cycle
NOTES:
1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.
2. Per input driven at the specified level. A and B pins do not contribute to
ΔIcc.
3. This parameter is guaranteed but not tested.
4. This parameter represents the current required to switch internal capacitance at the specified frequency. The A and B inputs do not contribute to the Dynamic Power Supply
Current. This parameter is guaranteed but not production tested.
Min.
—
—
Typ.
1.5
—
Max.
3
30
Unit
mA
µA
See Typical I
CCD
vs Enable Frequency graph below
TYPICAL I
CCD
vs ENABLE FREQUENCY CURVE AT V
CC
= 3.3V
20
18
16
14
12
I
CCD
(mA)
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
ENABLE FREQUENCY (MHz)
4
IDTQS3VH16211
2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH
INDUSTRIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
T
A
= -40°C to +85°C
V
CC
= 2.5 ± 0.2V
(1)
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
f
xOE
Parameter
Data Propagation Delay
(2,3)
xAx to xBx or xBx to xAx
Switch Turn-On Delay
xOE
to xAx or xBx
Switch Turn-Off Delay
xOE
to xAx or xBx
Operating Frequency - Enable
(2,5)
Min
.
(4)
⎯
1.5
1.5
⎯
Max.
V
CC
= 3.3 ± 0.3V
(1)
Min
.
(4)
⎯
1.5
1.5
⎯
Max.
Unit
ns
ns
ns
MHz
0.2
9
8.5
7.5
0.2
9
8.5
20
NOTES:
1. See Test Conditions under TEST CIRCUITS AND WAVEFORMS.
2. This parameter is guaranteed but not production tested.
3. The bus switch contributes no propagation delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone
is of the order of 0.2ns at C
L
= 50pF. Since this time constant is much smaller than the rise and fall times of typical driving signals, it adds very little propagation delay to the
system. Propagation delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interaction with the load on
the driven side.
4. Minimums are guaranteed but not production tested.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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