Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
45
1.0
5.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
V
A
V
µs
T
hs
≤
25 ˚C
I
C
= 4.5 A; I
B
= 1.29 A
I
C
= 4.5 A; I
B
= 1.1 A
I
F
= 4.5 A
I
Csat
= 4.5 A; I
B(end)
= 1.1 A
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
1
Turn-off current.
October 2002
1
Rev 3.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
R
be
V
CEOsust
V
CEsat
V
CEsat
V
BEsat
h
FE
h
FE
V
F
PARAMETER
Collector cut-off current
2
CONDITIONS
MIN.
-
-
140
7.5
-
700
-
-
-
7
4
-
TYP.
-
-
-
13.5
33
-
-
-
-
13
5.5
1.6
MAX.
1.0
2.0
390
-
-
-
5.0
1.0
1.3
23
7.0
2.0
UNIT
mA
mA
mA
V
Ω
V
V
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
Emitter-base breakdown voltage
I
B
= 600 mA
Base-emitter resistance
V
EB
= 7.5 V
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.1 A
I
C
= 4.5 A; I
B
= 1.29 A
Base-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.7 A
DC current gain
I
C
= 1 A; V
CE
= 5 V
I
C
= 4.5 A; V
CE
= 1 V
Diode forward voltage
I
F
= 4.5 A
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (38 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
µH;
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/µs)
I
Csat
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
µH;
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/µs)
TYP.
80
MAX.
-
UNIT
pF
µs
µs
µs
µs
t
s
t
f
5.0
0.4
6.0
0.6
t
s
t
f
4.7
0.25
5.7
0.35
2
Measured with half sine-wave voltage (curve tracer).
October 2002
2
Rev 3.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
TRANSISTOR
IC
DIODE
ICsat
h
FE
100
t
Tj = 25
°C
Tj = 125
°C
5V
IB
IBend
t
20us
26us
64us
10
1V
1
0.01
t
VCE
0.1
IC / A
1
10
Fig.1. Switching times waveforms.
Fig.4. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
ICsat
90 %
VBESAT / V
1.2
1.1
Tj = 25 C
Tj = 125 C
BU2508DF
IC
1
0.9
10 %
tf
ts
IB
IBend
0.8
t
0.7
0.6
IC/IB=
3
4
5
t
0.5
0.4
0.1
1
IC / A
10
- IBM
Fig.2. Switching times definitions.
Fig.5. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
+ 150 v nominal
adjust for ICsat
VCESAT / V
1
0.9
0.8
IC/IB=
5
4
3
BU2508DF
1mH
0.7
0.6
0.5
Tj = 25 C
D.U.T.
IBend
LB
12nF
Rbe
0.4
0.3
0.2
0.1
0
0.1
Tj = 125 C
-VBB
1
IC / A
10
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
October 2002
3
Rev 3.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
1.2
1.1
1
0.9
0.8
0.7
0.6
VBESAT / V
Tj = 25 C
Tj = 125 C
BU2508DF
IC=
6A
4.5A
3A
2A
12
11
10
9
8
7
6
5
4
3
2
1
0
ts, tf / us
BU2508DF
ts
IC =
3.5A
4.5A
tf
0.1
1
IB / A
10
0
1
2
IB / A
3
4
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 16 kHz
Normalised Power Derating
with heatsink compound
10
VCESAT / V
BU2508DF
Tj = 25 C
Tj = 125 C
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
6A
4.5A
1
3A
IC=2A
0.1
0.1
1
IB / A
10
0
20
40
60
80
Ths / C
100
120
140
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.11. Normalised power dissipation.
PD% = 100⋅P
D
/P
D 25˚C
= f (T
hs
)
1000
Eoff / uJ
BU2508DF
IC = 4.5A
3.5A
100
10
0.1
1
IB / A
10
Fig.9. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; f = 16 kHz
October 2002
4
Rev 3.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
100
IC / A
100
IC / A
= 0.01
ICM max
10
IC max
II
10 us
tp =
= 0.01
ICM max
10
IC max
II
10 us
tp =
Ptot max
Ptot max
100 us
1
1
100 us
I
0.1
1 ms
I
0.1
1 ms
10 ms
DC
10 ms
DC
0.01
1
10
100
VCE / V
1000
0.01
1
10
100
VCE / V
1000
Fig.12. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Fig.13. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
October 2002
5
Rev 3.000
PCB设计
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