Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
FEATURES
•
High power dissipation (830 mW)
•
Ultra low collector-emitter saturation voltage
•
1 A continuous current
•
High current switching
•
Improved device reliability due to reduced heat
generation.
APPLICATIONS
•
Medium power switching and muting
•
Linear regulators
•
DC/DC converter
•
LCD back-lighting
•
Supply line switching circuits
•
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
handbook, halfpage
1
PBSS5140S
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
−40
−1
−2
<500
V
A
A
mΩ
DESCRIPTION
PNP low V
CEsat
transistor in a SOT54 plastic package.
NPN complement: PBSS4140S.
2
3
1
2
MAM460
3
MARKING
TYPE NUMBER
PBSS5140S
MARKING CODE
S5140S
Fig.1 Simplified outline (SOT54) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−40
−5
−1
−2
−1
830
+150
150
+150
V
V
V
A
A
A
mW
°C
°C
°C
UNIT
2001 Nov 15
2
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
PBSS5140S
VALUE
150
UNIT
K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
PARAMETER
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−40
V; I
C
= 0
V
CB
=
−40
V; I
C
= 0; T
j
= 150
°C
V
CE
=
−30
V; I
B
= 0
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−1
mA
V
CE
=
−5
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CEsat
collector-emitter saturation
voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−1
A; I
B
=
−50
mA
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
−
−
−
−
300
300
250
160
−
−
−
−
−
−
150
−
MIN.
−
−
−
−
−
−
−
−
−
−
−
300
−
−
−
−
TYP.
MAX.
−100
−50
−100
−100
−
800
−
−
−200
−250
−500
<500
−1.1
−1
−
12
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT
nA
µA
nA
nA
2001 Nov 15
3
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140S
handbook, halfpage
1200
MHC088
hFE
1000
(1)
handbook, halfpage
−10
MHC089
VBE
(V)
800
600
(2)
−1
(1)
(2)
400
(3)
(3)
200
−10
−1
−10
−1
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
−1
−10
−10
2
−10
3
−10
4
IC (mA)
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−5
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
3
handbook, halfpage
VCEsat
(mV)
−10
2
MHC090
10
2
handbook, halfpage
RCEsat
(Ω)
MHC091
10
(1)
−10
(2)
(3)
1
(1)
(2)
(3)
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
10
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
2001 Nov 15
4
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