DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMB9
PNP resistor-equipped transistors
R1 = 10 kΩ, R2 = 47 kΩ
Product specification
2003 Jan 07
Philips Semiconductors
Product specification
PNP resistor-equipped transistors
R1 = 10 kΩ, R2 = 47 kΩ
FEATURES
•
300 mW total power dissipation
•
Very small 1.6 mm
×
1.2 mm
×
0.55 mm ultra thin
package
•
Excellent coplanarity due to straight leads
•
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
•
Reduces required PCB area
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PNP resistor-equipped transistors in a SOT666 plastic
package.
MARKING
TYPE NUMBER
PEMB9
MARKING CODE
Z6
1
Top view
handbook, halfpage
6
PEMB9
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
TR1
TR2
R1
R2
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
PARAMETER
collector-emitter voltage
peak collector current
PNP
PNP
bias resistor
bias resistor
MAX.
−50
−100
−
−
10
47
UNIT
V
mA
−
−
kΩ
kΩ
5
4
6
5
4
R1
TR1
R2
R2
TR2
R1
2
3
1
MAM451
2
3
Fig.1
Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2003 Jan 07
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistors
R1 = 10 kΩ, R2 = 47 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MIN.
MAX.
−50
−50
−10
+40
−6
−100
−100
200
+150
150
+150
PEMB9
UNIT
Per transistor unless otherwise specified
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on a FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; notes 1
and 2
VALUE
416
UNIT
K/W
total power dissipation
300
mW
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
V
V
mA
mA
mW
°C
°C
°C
open emitter
open base
open collector
V
V
V
2003 Jan 07
3
Philips Semiconductors
Product specification
PNP resistor-equipped transistors
R1 = 10 kΩ, R2 = 47 kΩ
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
CB
=
−50
V; I
C
= 0
V
CE
=
−50
V; I
B
= 0
V
CE
=
−30
V; I
B
= 0; T
j
= 150
°C
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−10
mA
I
C
=
−5
mA; I
B
=
−0.25
mA
V
CE
=
−5
V; I
C
=
−100 µA
V
CE
=
−0.3
V; I
C
=
−5
mA
MIN.
−
−
−
−
−100
−
−
−1.4
7
3.7
−
TYP.
−
−
−
−
−
−
−0.7
−0.8
10
4.7
−
PEMB9
MAX.
−100
−1
−50
−150
−
−100
−0.5
−
13
5.7
3
UNIT
Per transistor unless otherwise specified
I
CBO
I
CEO
collector-base cut-off current
collector-emitter cut-off current
nA
µA
µA
µA
mV
V
V
kΩ
pF
2003 Jan 07
4
Philips Semiconductors
Product specification
PNP resistor-equipped transistors
R1 = 10 kΩ, R2 = 47 kΩ
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
PEMB9
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2003 Jan 07
5
嵌入式系统
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