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BYV27-50Z

产品描述Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15L, 2 PIN
产品类别分立半导体    二极管   
文件大小307KB,共2页
制造商Galaxy Microelectronics
标准
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BYV27-50Z概述

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15L, 2 PIN

BYV27-50Z规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Galaxy Microelectronics
包装说明DO-15L, 2 PIN
Reach Compliance Codeunknown
应用SUPER FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.98 V
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流50 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压50 V
最大反向电流5 µA
最大反向恢复时间0.025 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL

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BL
FEATURES
Low cost
GALAXY ELECTRICAL
BYV27-50(Z) - - - BYV27-600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 2.0, 1.9,1.6 A
SUPER FAST RECTIFIERS
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and sim ilar solvents
DO - 15
MECHANICAL DATA
Case: JEDEC DO-15,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 gram s
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 BYV27
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
2.0
150
105
150
200
140
200
300
210
300
1.9
400
280
400
600
420
600
1.6
V
V
V
A
Peak forw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
I
FSM
50.0
40.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
5.0
100.0
35
62
100
- 55 ----- + 125
- 55 ----- + 150
1.05
1.25
V
A
50
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 1764114
BL
GALAXY ELECTRICAL
1.

 
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