EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | APTA Group Inc |
| 包装说明 | DIP, DIP28,.1 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 120 ns |
| 命令用户界面 | NO |
| 数据轮询 | YES |
| 耐久性 | 10000 Write/Erase Cycles |
| JESD-30 代码 | R-XDIP-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 端子数量 | 28 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 32KX8 |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.1 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 页面大小 | 64 words |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.0003 A |
| 最大压摆率 | 0.133 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 切换位 | YES |
| 最长写入周期时间 (tWC) | 10 ms |
| MEM832VLM-120 | MEM832VL-120 | MEM832VI-150 | MEM832VLI-120 | MEM832VLM-150 | MEM832VLMB-150 | MEM832VM-150 | |
|---|---|---|---|---|---|---|---|
| 描述 | EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28 | EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28 | EEPROM, 32KX8, 150ns, Parallel, CMOS, CDIP28 | EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28 | EEPROM, 32KX8, 150ns, Parallel, CMOS, CDIP28 | EEPROM, 32KX8, 150ns, Parallel, CMOS, CDIP28 | EEPROM, 32KX8, 150ns, Parallel, CMOS, CDIP28 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP28,.1 | DIP, DIP28,.1 | DIP, DIP28,.1 | DIP, DIP28,.1 | DIP, DIP28,.1 | DIP, DIP28,.1 | DIP, DIP28,.1 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| 最长访问时间 | 120 ns | 120 ns | 150 ns | 120 ns | 150 ns | 150 ns | 150 ns |
| 命令用户界面 | NO | NO | NO | NO | NO | NO | NO |
| 数据轮询 | YES | YES | YES | YES | YES | YES | YES |
| 耐久性 | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles |
| JESD-30 代码 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 最高工作温度 | 125 °C | 70 °C | 85 °C | 85 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | - | -40 °C | -40 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP28,.1 | DIP28,.1 | DIP28,.1 | DIP28,.1 | DIP28,.1 | DIP28,.1 | DIP28,.1 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 页面大小 | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.0003 A | 0.0003 A | 0.003 A | 0.0003 A | 0.0003 A | 0.0003 A | 0.003 A |
| 最大压摆率 | 0.133 mA | 0.133 mA | 0.106 mA | 0.133 mA | 0.107 mA | 0.107 mA | 0.106 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 切换位 | YES | YES | YES | YES | YES | YES | YES |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
| 厂商名称 | APTA Group Inc | - | APTA Group Inc | APTA Group Inc | APTA Group Inc | APTA Group Inc | APTA Group Inc |
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