INCH–POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 30 March 2013.
MIL–PRF–19500/539F
30 December 2012
SUPERSEDING
MIL–PRF–19500/539E
22 August 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON,
TYPES 2N6300 AND 2N6301, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL–PRF–19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power Darlington transistors.
Three levels of product assurance are provided for each device type as specified in
MIL–PRF–19500.
1.2 Physical dimensions. The device package style is TO–213AA (formerly TO–66) in accordance with
figure 1.
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25°C.
P
T
(1)
T
C
= 0°C
W
2N6300
2N6301
75
75
W
65
65
T
C
= 100°C
W
37
37
R
θ
JC
(2)
°C/W
2.66
2.66
V
CBO
V
CEO
V
EBO
I
C
I
B
T
J
and T
STG
Types
V dc
60
80
V dc
60
80
V dc
5
5
A dc mA dc
8
8
120
120
°C
–55 to +200
–55 to +200
(1) See
figure 2
for temperature-power derating curves.
(2) See
figure 3
for thermal impedance curve.
Comments, suggestions, or questions on this document should be addressed DLA Land and Maritime ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218–3990, or emailed to
semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil.
AMSC N/A
FSC 5961
MIL–PRF–19500/539F
1.4 Primary electrical characteristics. Unless otherwise specified, T
C
= +25°C.
h
FE2
(1)
V
CE
= 3 V dc
I
C
= 4 A dc
h
FE3
(1)
V
CE
= 3 V dc
I
C
= 8 A dc
h
fe
V
CE
= 3 V dc
I
C
= 3 A dc
f = 1 MHz
C
obo
100 kHz ≤ f ≤ 1 MHz
V
CB
= 10 V dc
I
E
= 0
pF
Min
Max
750
18,000
100
25
350
200
Pulse response
t
on
µs
2.0
t
off
µs
8.0
Limit
Limit
V
BE(sat)2
(1)
I
C
= 8 A dc
I
B
= 80 mA dc
V dc
V
CE(sat)2
(1)
I
C
= 8 A dc
I
B
= 80 mA dc
V dc
h
fe
V
CE
= 3 V dc
I
C
= 3 A dc
f = 1 kHz
Min
Max
300
4.0
3.0
(1) Pulsed see
4.5.1.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections
3, 4,
or
5
of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections
3, 4,
or
5
of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
MIL–PRF–19500
–
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL–STD–750
–
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
https://assist.dla.mil/quicksearch
or
https://assist.dla.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111–5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL–PRF–19500/539F
FIGURE 1. Physical dimensions and schematic (TO–213AA, formerly TO–66).
3
MIL–PRF–19500/539F
Dimensions
Ltr
Min
CD
CH
HR
HR1
HT
LD
LL
L1
MHD
MHS
PS
PS1
S
.142
.958
.190
.093
.570
.115
.050
.028
.360
.470
.250
Inches
Max
.620
.340
.350
.145
.075
.034
.500
.050
.152
.962
.210
.107
.590
3.61
24.33
4.83
2.37
14.48
2.92
1.27
0.71
9.14
Millimeters
Min
11.94
6.35
Max
15.74
8.64
8.89
3.68
1.91
0.86
12.70
1.27
3.86
24.43
5.33
2.71
14.99
9
9
9
4
3, 5
6, 7
6
8
4
3
Notes
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Terminal 1 is the emitter and terminal 2 is the base. The collector shall be electrically connected
to the case.
3. Body contour is optional within zone defined by dimension CD.
4. Applies to two holes, at both ends.
5. Dimension HT does not include sealing flanges.
6. Applies to both terminals.
7. Dimension LD applies between dimensions L
1
and LL. Diameter is uncontrolled in dimension L
1
.
8. Within this zone the lead diameter may vary to allow for lead finishes and irregularities.
9. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating
plane. When gauge is not used, measurement shall be made at seating plane.
10. The seating plane of header shall be flat within .001 inch (0.03 mm), concave to .004 inch (0.10 mm),
convex inside a .520 inch (13.20 mm) diameter circle on the center of the header, and flat within .001 inch
(0.03 mm), concave to .006 inch (0.15 mm), convex overall.
11. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
FIGURE 1. Physical dimensions and schematic (TO–213AA, formerly TO–66) – Continued.
4
MIL–PRF–19500/539F
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in
MIL–PRF–19500
and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and
6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in
MIL–PRF–19500
and as follows:
I
M
I
H
t
H
t
SW
–
–
–
–
The measurement current applied to forward bias the junction for measurement of V
BE
.
The collector current applied to the device under test during the heating period.
The duration of the applied heating power pulse.
Sample window time during which final V
BE
measurement is made.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL–PRF–19500,
and on
figure 1
herein.
3.4.1 Lead finish. The lead finish shall be solderable in accordance with
MIL–PRF–19500, MIL–STD–750,
and
herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see
6.2).
3.4.2 Polarity. The polarity of the device types shall be as shown on
figure 1.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in
1.3, 1.4,
and
table I.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in
table I.
3.7 Marking. Marking shall be in accordance with
MIL–PRF–19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see
4.3).
Conformance inspection (see
4.4
and
tables I
and
II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with
MIL–PRF–19500
and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II
tests, the tests specified in
table II
herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
5
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