电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IS62C256AL-45TLI

产品描述Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, LEAD FREE, PLASTIC, TSOP1-28
产品类别存储    存储   
文件大小381KB,共12页
制造商Integrated Silicon Solution ( ISSI )
标准  
下载文档 详细参数 选型对比 全文预览

IS62C256AL-45TLI在线购买

供应商 器件名称 价格 最低购买 库存  
IS62C256AL-45TLI - - 点击查看 点击购买

IS62C256AL-45TLI概述

Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, LEAD FREE, PLASTIC, TSOP1-28

IS62C256AL-45TLI规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码TSOP
包装说明TSOP1, TSSOP28,.53,22
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time6 weeks
最长访问时间45 ns
I/O 类型COMMON
JESD-30 代码R-PDSO-G28
JESD-609代码e3
长度11.8 mm
内存密度262144 bit
内存集成电路类型STANDARD SRAM
内存宽度8
湿度敏感等级3
功能数量1
端子数量28
字数32768 words
字数代码32000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TSOP1
封装等效代码TSSOP28,.53,22
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源5 V
认证状态Not Qualified
座面最大高度1.2 mm
最大待机电流0.00002 A
最小待机电流2 V
最大压摆率0.025 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn) - annealed
端子形式GULL WING
端子节距0.55 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
宽度8 mm

文档预览

下载PDF文档
IS65C256AL
IS62C256AL
32K x 8 LOW POWER CMOS STATIC RAM
FEATURES
Access time: 25 ns, 45 ns
Low active power: 200 mW (typical)
Low standby power
— 150 µW (typical) CMOS standby
— 15 mW (typical) operating
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V power supply
Lead-free available
Industrial and Automotive temperatures available
JULY 2015
word by 8-bit CMOS static RAM. It is fabricated using
ISSI
's high-performance, low power CMOS technology.
DESCRIPTION
The
ISSI
IS62C256AL/IS65C256AL is a low power, 32,768
When
CE
is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down to 150 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Select (CE) input and an active LOW Output
Enable (OE) input. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62C256AL/IS65C256AL is pin compatible with other
32Kx8 SRAMs in plastic SOP or TSOP (Type I) package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
07/20/2015
1

IS62C256AL-45TLI相似产品对比

IS62C256AL-45TLI IS65C256AL-25ULA3 IS65C256AL-25TLA3 IS62C256AL-25ULI IS62C256AL-45ULI-TR
描述 Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, LEAD FREE, PLASTIC, TSOP1-28 Standard SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.330 INCH, LEAD FREE, PLASTIC, SOP-28 Standard SRAM, 32KX8, 25ns, CMOS, PDSO28, LEAD FREE, PLASTIC, TSOP1-28 Standard SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.330 INCH, LEAD FREE, PLASTIC, SOP-28 Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, LEAD FREE, PLASTIC, SOP-28
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合
零件包装代码 TSOP SOIC TSOP SOIC SOIC
包装说明 TSOP1, TSSOP28,.53,22 SOP, SOP28,.45 TSOP1, TSSOP28,.53,22 SOP, SOP,
针数 28 28 28 28 28
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 6 weeks 10 weeks 10 weeks 6 weeks 6 weeks
最长访问时间 45 ns 25 ns 25 ns 25 ns 45 ns
JESD-30 代码 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28
JESD-609代码 e3 e3 e3 e3 e3
长度 11.8 mm 18.11 mm 11.8 mm 18.11 mm 18.11 mm
内存密度 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8
湿度敏感等级 3 3 3 3 3
功能数量 1 1 1 1 1
端子数量 28 28 28 28 28
字数 32768 words 32768 words 32768 words 32768 words 32768 words
字数代码 32000 32000 32000 32000 32000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 125 °C 125 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C
组织 32KX8 32KX8 32KX8 32KX8 32KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP1 SOP TSOP1 SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 2.84 mm 1.2 mm 2.84 mm 2.84 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL AUTOMOTIVE AUTOMOTIVE INDUSTRIAL INDUSTRIAL
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.55 mm 1.27 mm 0.55 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40 40
宽度 8 mm 8.405 mm 8 mm 8.405 mm 8.405 mm
厂商名称 Integrated Silicon Solution ( ISSI ) - - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
I/O 类型 COMMON COMMON COMMON - -
输出特性 3-STATE 3-STATE 3-STATE - -
封装等效代码 TSSOP28,.53,22 SOP28,.45 TSSOP28,.53,22 - -
电源 5 V 5 V 5 V - -
最大待机电流 0.00002 A 0.00005 A 0.00005 A - -
最小待机电流 2 V 2 V 2 V - -
最大压摆率 0.025 mA 0.035 mA 0.035 mA - -
Base Number Matches - 1 1 1 -

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2513  2140  560  1611  2811  4  43  46  13  15 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved